17519924. PHASE CHANGE MEMORY WITH ENCAPSULATED PHASE CHANGE ELEMENT simplified abstract (International Business Machines Corporation)

PHASE CHANGE MEMORY WITH ENCAPSULATED PHASE CHANGE ELEMENT

Organization Name

International Business Machines Corporation

Inventor(s)

Dexin Kong of Redmond WA (US)

Kangguo Cheng of Schenectady NY (US)

Juntao Li of Cohoes NY (US)

Zheng Xu of Wappingers Falls NY (US)

PHASE CHANGE MEMORY WITH ENCAPSULATED PHASE CHANGE ELEMENT - A simplified explanation of the abstract

This abstract first appeared for US patent application 17519924 titled 'PHASE CHANGE MEMORY WITH ENCAPSULATED PHASE CHANGE ELEMENT

Simplified Explanation

The patent application describes semiconductor devices and methods for forming them. The semiconductor structure includes a substrate with a first electrode, a heater element directly contacting the first electrode, a phase change cell directly on the heater element, and a spacer encapsulating the sidewalls of the phase change cell. There is also a second electrode directly on the phase change cell and the spacer.

• The semiconductor structure includes a substrate with a first electrode.
• A heater element is directly in contact with the first electrode in the substrate.
• A phase change cell is directly on the heater element.
• The sidewalls of the phase change cell are encapsulated with a spacer.
• A second electrode is directly on the phase change cell and the spacer.

Potential applications of this technology:

• Memory devices
• Data storage devices
• Computing devices
• Communication devices

Problems solved by this technology:

• Improved performance and reliability of semiconductor devices
• Enhanced data storage capabilities
• Efficient heat transfer and control

Benefits of this technology:

• Higher data storage density
• Faster data access and retrieval
• Lower power consumption
• Improved device lifespan and durability

Original Abstract Submitted

Semiconductor devices and methods for forming the semiconductor devices are described. An example semiconductor structure can include a substrate including a first electrode. The example semiconductor structure can further include a heater element directly contacting the first electrode in the substrate. The example semiconductor structure a phase change cell directly on the heater element. The sidewalls of the phase change cell can be encapsulated with a spacer. The example semiconductor structure a second electrode directly on the phase change cell and the spacer.