View source for 17494101. STACKED COMPLEMENTARY FIELD EFFECT TRANSISTORS simplified abstract (International Business Machines Corporation)

=STACKED COMPLEMENTARY FIELD EFFECT TRANSISTORS=


==Organization Name==

[[:Category:International Business Machines Corporation|International Business Machines Corporation]]


[[Category:International Business Machines Corporation]]

==Inventor(s)==

[[:Category:HUIMEI Zhou of Albany NY (US)|HUIMEI Zhou of Albany NY (US)]][[Category:HUIMEI Zhou of Albany NY (US)]]

[[:Category:Alexander Reznicek of Troy NY (US)|Alexander Reznicek of Troy NY (US)]][[Category:Alexander Reznicek of Troy NY (US)]]

[[:Category:MIAOMIAO Wang of Albany NY (US)|MIAOMIAO Wang of Albany NY (US)]][[Category:MIAOMIAO Wang of Albany NY (US)]]

[[:Category:Ruilong Xie of Niskayuna NY (US)|Ruilong Xie of Niskayuna NY (US)]][[Category:Ruilong Xie of Niskayuna NY (US)]]

==STACKED COMPLEMENTARY FIELD EFFECT TRANSISTORS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17494101 titled 'STACKED COMPLEMENTARY FIELD EFFECT TRANSISTORS

==Simplified Explanation==

The abstract describes a patent application for a complementary field effect transistor (CFET) structure. The structure consists of two transistors stacked on top of each other, with the source/drain regions of the first transistor positioned above the source/drain regions of the second transistor. The source/drain regions are connected to separate source/drain contacts. An L-shaped isolation element, composed of vertical and horizontal isolation elements, separates the two source/drain contacts.

* The patent application describes a CFET structure with a unique arrangement of transistors and source/drain contacts.
* The first transistor is positioned above the second transistor, allowing for a compact design.
* The source/drain regions of the first transistor are located above the source/drain regions of the second transistor.
* Separate source/drain contacts are provided for each transistor.
* An L-shaped isolation element, consisting of vertical and horizontal isolation elements, isolates the two source/drain contacts.

== Potential Applications ==
* Integrated circuits
* Semiconductor devices
* Electronics manufacturing

== Problems Solved ==
* Compact design: The stacked arrangement of transistors allows for a more compact structure, saving space in integrated circuits.
* Isolation: The L-shaped isolation element effectively isolates the source/drain contacts, preventing interference between the transistors.

== Benefits ==
* Space-saving: The compact design of the CFET structure saves space in integrated circuits, allowing for more components to be packed into a smaller area.
* Improved performance: The isolation provided by the L-shaped isolation element helps to prevent interference and improve the overall performance of the CFET structure.


==Original Abstract Submitted==

A CFET (complementary field effect transistor) structure including a first transistor disposed above a second transistor, a first source/drain region of the first transistor disposed above a second source/drain region of the second transistor, a first source/drain contact for the first source/drain region, and a second source drain contact for the second source drain region. The first source/drain contact is isolated from the second source/drain contact by an L-shaped isolation element including vertical and horizontal isolation elements.



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