17491012. TWO-TERMINAL MEMORY DEVICE, A METHOD FOR MANUFACTURING THE SAME, AND A SEMICONDUCTOR DEVICE INCLUDING A TWO-TERMINAL MEMORY DEVICE simplified abstract (Kia Corporation)
Contents
- 1 TWO-TERMINAL MEMORY DEVICE, A METHOD FOR MANUFACTURING THE SAME, AND A SEMICONDUCTOR DEVICE INCLUDING A TWO-TERMINAL MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 TWO-TERMINAL MEMORY DEVICE, A METHOD FOR MANUFACTURING THE SAME, AND A SEMICONDUCTOR DEVICE INCLUDING A TWO-TERMINAL MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Abstract
- 1.6 Patent/Innovation Explanation
- 1.7 Potential Applications
- 1.8 Problems Solved
- 1.9 Benefits
- 1.10 Original Abstract Submitted
TWO-TERMINAL MEMORY DEVICE, A METHOD FOR MANUFACTURING THE SAME, AND A SEMICONDUCTOR DEVICE INCLUDING A TWO-TERMINAL MEMORY DEVICE
Organization Name
Inventor(s)
Jong-Seok Lee of Suwon-si (KR)
Sang-Hyeok Yang of Suwon-si (KR)
TWO-TERMINAL MEMORY DEVICE, A METHOD FOR MANUFACTURING THE SAME, AND A SEMICONDUCTOR DEVICE INCLUDING A TWO-TERMINAL MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17491012 titled 'TWO-TERMINAL MEMORY DEVICE, A METHOD FOR MANUFACTURING THE SAME, AND A SEMICONDUCTOR DEVICE INCLUDING A TWO-TERMINAL MEMORY DEVICE
Simplified Explanation
Abstract
A two-terminal memory device is described in this patent application. The device includes a substrate, a source, and a drain formed on the substrate's upper surface, a ferroelectric layer connected to the source and drain, and an extended drain laminated on the ferroelectric layer. This memory device can be used as a cross-point type and neuromorphic device, allowing for multiple resistance levels with switchable resistance layers.
Patent/Innovation Explanation
- Two-terminal memory device with a substrate, source, and drain.
- Ferroelectric layer connected to the source and drain.
- Extended drain laminated on the ferroelectric layer.
- Enables cross-point type and neuromorphic device functionality.
- Allows for multiple resistance levels with switchable resistance layers.
Potential Applications
This technology has potential applications in various fields, including:
- Memory devices for electronic devices and computers.
- Neuromorphic computing for artificial intelligence and machine learning.
- Cross-point memory arrays for high-density data storage.
- Non-volatile memory for low-power consumption devices.
Problems Solved
The two-terminal memory device solves several problems in the field of memory technology, including:
- Limited resistance levels in traditional memory devices.
- Complex circuitry required for implementing multi-resistance levels.
- High power consumption in memory devices.
- Lack of compatibility with neuromorphic computing.
Benefits
The benefits of this two-terminal memory device are:
- Ability to implement multiple resistance levels.
- Simplified circuitry for multi-resistance level implementation.
- Lower power consumption compared to traditional memory devices.
- Compatibility with neuromorphic computing.
- High-density data storage capabilities.
Original Abstract Submitted
A two-terminal memory device including: a substrate; a source and a drain formed to face each other on an upper surface of the substrate; a ferroelectric layer connected to the source and the drain and formed between the source and the drain; and an extended drain extending from the drain and laminated on the ferroelectric layer. The two-terminal memory device may be applied as a cross-point type and neuromorphic device capable of implementing multi-resistance levels with multi-layer switchable resistance layers.
