17491012. TWO-TERMINAL MEMORY DEVICE, A METHOD FOR MANUFACTURING THE SAME, AND A SEMICONDUCTOR DEVICE INCLUDING A TWO-TERMINAL MEMORY DEVICE simplified abstract (Hyundai Motor Company)
Contents
- 1 TWO-TERMINAL MEMORY DEVICE, A METHOD FOR MANUFACTURING THE SAME, AND A SEMICONDUCTOR DEVICE INCLUDING A TWO-TERMINAL MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 TWO-TERMINAL MEMORY DEVICE, A METHOD FOR MANUFACTURING THE SAME, AND A SEMICONDUCTOR DEVICE INCLUDING A TWO-TERMINAL MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Original Abstract Submitted
TWO-TERMINAL MEMORY DEVICE, A METHOD FOR MANUFACTURING THE SAME, AND A SEMICONDUCTOR DEVICE INCLUDING A TWO-TERMINAL MEMORY DEVICE
Organization Name
Inventor(s)
Jong-Seok Lee of Suwon-si (KR)
Sang-Hyeok Yang of Suwon-si (KR)
TWO-TERMINAL MEMORY DEVICE, A METHOD FOR MANUFACTURING THE SAME, AND A SEMICONDUCTOR DEVICE INCLUDING A TWO-TERMINAL MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17491012 titled 'TWO-TERMINAL MEMORY DEVICE, A METHOD FOR MANUFACTURING THE SAME, AND A SEMICONDUCTOR DEVICE INCLUDING A TWO-TERMINAL MEMORY DEVICE
Simplified Explanation
The abstract describes a two-terminal memory device that includes a substrate, a source, a drain, a ferroelectric layer, and an extended drain. The device can be used as a cross-point type and neuromorphic device with multiple resistance levels.
- The two-terminal memory device has a substrate with a source and a drain formed on its upper surface.
- A ferroelectric layer is connected to the source and the drain and is located between them.
- An extended drain is formed from the drain and is laminated on the ferroelectric layer.
- The device can be used as a cross-point type and neuromorphic device.
- It is capable of implementing multi-resistance levels with multi-layer switchable resistance layers.
Potential Applications
This technology has potential applications in various fields, including:
- Memory devices
- Neuromorphic computing
- Cross-point memory arrays
Problems Solved
The two-terminal memory device solves several problems, such as:
- Limited resistance levels in memory devices
- Inefficient neuromorphic computing
- Complex circuitry in cross-point memory arrays
Benefits
The benefits of this technology include:
- Increased resistance levels in memory devices
- Improved efficiency in neuromorphic computing
- Simplified circuitry in cross-point memory arrays
Original Abstract Submitted
A two-terminal memory device including: a substrate; a source and a drain formed to face each other on an upper surface of the substrate; a ferroelectric layer connected to the source and the drain and formed between the source and the drain; and an extended drain extending from the drain and laminated on the ferroelectric layer. The two-terminal memory device may be applied as a cross-point type and neuromorphic device capable of implementing multi-resistance levels with multi-layer switchable resistance layers.
