17463000. Method of Forming A Semiconductor Device simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

Method of Forming A Semiconductor Device

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Chia-Cheng Chen of Hsinchu (TW)

Chun-Hung Wu of New Taipei City (TW)

Liang-Yin Chen of Hsinchu (TW)

Huicheng Chang of Tainan City (TW)

Yee-Chia Yeo of Hsinchu (TW)

Chun-Yen Chang of Hsinchu (TW)

Chih-Kai Yang of Taipei City (TW)

Yu-Tien Shen of Tainan City (TW)

Ya Hui Chang of Hsinchu (TW)

Method of Forming A Semiconductor Device - A simplified explanation of the abstract

This abstract first appeared for US patent application 17463000 titled 'Method of Forming A Semiconductor Device

Abstract

The patent application describes a method for forming a semiconductor device. The method involves several steps, including the formation of a target layer over a semiconductor substrate, the formation of a carbon-rich hard masking layer over the target layer, the patterning of features in the carbon-rich hard masking layer using an etching process, the performance of a directional ion beam trimming process on the patterned features, and the patterning of the target layer using the carbon-rich hard masking layer as a mask.

Bullet Points

• Formation of a target layer over a semiconductor substrate
• Formation of a carbon-rich hard masking layer over the target layer
• Patterning of features in the carbon-rich hard masking layer using an etching process
• Performance of a directional ion beam trimming process on the patterned features
• Patterning of the target layer using the carbon-rich hard masking layer as a mask

Potential Applications

• Semiconductor manufacturing
• Integrated circuit fabrication
• Electronics industry

Problems Solved

• Provides a method for forming a semiconductor device with improved precision and accuracy
• Enables the patterning of features in a carbon-rich hard masking layer
• Allows for the use of a directional ion beam trimming process to further refine the patterned features

Benefits

• Enhanced control over the formation of semiconductor devices
• Improved efficiency and reliability in the fabrication process
• Enables the production of smaller and more advanced semiconductor devices

Original Abstract Submitted

A method for forming a semiconductor device is provided. In some embodiments, the method includes forming a target layer over a semiconductor substrate, forming a carbon-rich hard masking layer over the target layer, patterning features in the carbon-rich hard masking layer using an etching process, performing a directional ion beam trimming process on the features patterned in the carbon-rich hard masking layer, and patterning the target layer using the carbon-rich hard masking layer as a mask.