17462695. NEW DESIGN OF EUV VESSEL PERIMETER FLOW AUTO ADJUSTMENT simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

NEW DESIGN OF EUV VESSEL PERIMETER FLOW AUTO ADJUSTMENT

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Che-Chang Hsu of Taichung City (TW)

Sheng-Kang Yu of Hsinchu City (TW)

Shang-Chieh Chien of New Taipei City (TW)

Li-Jui Chen of Hsinchu City (TW)

Heng-Hsin Liu of New Taipei City (TW)

NEW DESIGN OF EUV VESSEL PERIMETER FLOW AUTO ADJUSTMENT - A simplified explanation of the abstract

This abstract first appeared for US patent application 17462695 titled 'NEW DESIGN OF EUV VESSEL PERIMETER FLOW AUTO ADJUSTMENT

Simplified Explanation

The abstract describes a method for generating extreme ultraviolet (EUV) radiation in a semiconductor manufacturing system. The method involves directing one or more streams of gas through gas outlets mounted over a collector mirror of an EUV radiation source. This generates a flow of gas over the surface of the collector mirror. The flow rates of the gas streams are adjusted to reduce the deposition of metal debris on the mirror's surface.

• Gas streams are directed through gas outlets over a collector mirror to generate a gas flow.
• Flow rates of the gas streams are adjusted to minimize metal debris deposition on the mirror's surface.

Potential Applications

This technology can be applied in semiconductor manufacturing systems where extreme ultraviolet (EUV) radiation is required. It can be used in various stages of the manufacturing process, such as lithography, to generate EUV radiation for precise patterning and etching of semiconductor materials.

Problems Solved

The method addresses the issue of metal debris deposition on the surface of the collector mirror. Metal debris can accumulate over time and degrade the performance of the EUV radiation source. By adjusting the flow rates of the gas streams, the amount of metal debris deposited on the mirror's surface is reduced, ensuring the longevity and efficiency of the EUV radiation source.

Benefits

- Improved performance: By reducing metal debris deposition, the method ensures the collector mirror maintains its reflective properties, resulting in more efficient generation of EUV radiation. - Extended lifespan: Minimizing metal debris accumulation helps prolong the lifespan of the collector mirror, reducing the need for frequent replacements and associated costs. - Enhanced semiconductor manufacturing: The use of EUV radiation in semiconductor manufacturing enables more precise and intricate patterning, leading to higher quality and more advanced semiconductor devices.

Original Abstract Submitted

In a method of generating extreme ultraviolet (EUV) radiation in a semiconductor manufacturing system one or more streams of a gas is directed, through one or more gas outlets mounted over a rim of a collector mirror of an EUV radiation source, to generate a flow of the gas over a surface of the collector mirror. The one or more flow rates of the one or more streams of the gas are adjusted to reduce an amount of metal debris deposited on the surface of the collector mirror.