17461231. STRUCTURE AND METHOD FOR MULTIPLE BEOL K-VALUE DIELECTRIC simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

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STRUCTURE AND METHOD FOR MULTIPLE BEOL K-VALUE DIELECTRIC

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Anhao Cheng of Hsinchu (TW)

STRUCTURE AND METHOD FOR MULTIPLE BEOL K-VALUE DIELECTRIC - A simplified explanation of the abstract

This abstract first appeared for US patent application 17461231 titled 'STRUCTURE AND METHOD FOR MULTIPLE BEOL K-VALUE DIELECTRIC

Simplified Explanation

The abstract describes an integrated circuit that includes transistors and an interlevel dielectric layer. The dielectric layer has two regions, with the second region having a higher dielectric constant than the first region. Metal signal lines are formed in the first region, while metal-on-metal capacitors are formed in the second region.

  • The integrated circuit includes transistors and an interlevel dielectric layer.
  • The interlevel dielectric layer has two regions: a first region and a second region.
  • The second region has a higher dielectric constant than the first region.
  • The difference in dielectric constant is achieved by curing the first region while shielding the second region from the curing process.
  • Metal signal lines are formed in the first region.
  • Metal-on-metal capacitors are formed in the second region.

Potential Applications:

  • This technology can be used in various electronic devices that utilize integrated circuits, such as smartphones, computers, and tablets.
  • It can be applied in the manufacturing of microprocessors, memory chips, and other electronic components.

Problems Solved:

  • The technology solves the problem of integrating metal signal lines and metal-on-metal capacitors in an integrated circuit.
  • By having different dielectric constants in different regions, the circuit can achieve better performance and functionality.

Benefits:

  • The use of metal signal lines and metal-on-metal capacitors allows for improved circuit performance and functionality.
  • The ability to have different dielectric constants in different regions provides flexibility in circuit design and optimization.
  • This technology can lead to smaller and more efficient integrated circuits, enabling advancements in various electronic devices.


Original Abstract Submitted

An integrated circuit includes a plurality of transistors and an interlevel dielectric layer formed over the transistors. The interlevel dielectric layer includes a first region and a second region with a higher dielectric constant than the first region. The difference in dielectric constant is produced by curing the first region shielding the second region from the curing. Metal signal lines are formed in the first region. Metal-on-metal capacitors are formed in the second region.

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