17461202. THIN FILM TRANSISTOR BASED TEMPERATURE SENSOR simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

THIN FILM TRANSISTOR BASED TEMPERATURE SENSOR

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Shih-Lien Linus Lu of Hsinchu (TW)

Katherine H. Chiang of New Taipei City (TW)

THIN FILM TRANSISTOR BASED TEMPERATURE SENSOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 17461202 titled 'THIN FILM TRANSISTOR BASED TEMPERATURE SENSOR

Simplified Explanation

The present disclosure describes a thin film transistor based temperature sensor circuit that includes a first frequency generator, a second frequency generator, counter devices, and a processor device. The circuit is used to determine the frequency based on the number of pulses generated by the frequency generators.

• The thin film transistor based temperature sensor circuit uses thin film transistors and complementary metal oxide semiconductor transistors to generate frequencies.
• The first and second counter devices count the number of pulses from the first and second frequency generators, respectively.
• The processor device analyzes the number of pulses to determine the frequency.

Potential Applications

• Temperature monitoring in electronic devices
• Environmental monitoring systems
• Industrial process control

Problems Solved

• Accurate temperature measurement in electronic devices
• Efficient frequency generation for temperature sensing
• Integration of temperature sensing circuitry in thin film transistor technology

Benefits

• High accuracy temperature measurement
• Compact and integrated circuit design
• Cost-effective implementation in thin film transistor technology

Original Abstract Submitted

The present disclosure describes an embodiment of a thin film transistor based temperature sensor circuit. The thin film transistor based temperature sensor circuit includes a first frequency generator with thin film transistors, a second frequency generator with complementary metal oxide semiconductor transistors, first and second counter devices, and a processor device. The first and second counter devices are configured to count a number of first pulses and a number of second pulses from the first frequency generator and second frequency generator, respectively. The processor device is configured to determine a frequency based on the number of first and second pulses.