17461028. MEMORY DEVICE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

MEMORY DEVICE AND METHOD FOR FORMING THE SAME

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Meng-Sheng Chang of Hsinchu County (TW)

Chia-En Huang of Hsinchu County (TW)

Yih Wang of Hsinchu City (TW)

MEMORY DEVICE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17461028 titled 'MEMORY DEVICE AND METHOD FOR FORMING THE SAME

Simplified Explanation

The abstract describes an OTP (One-Time Programmable) memory device that includes a substrate, two transistors, word lines, and a bit line. The first transistor has a gate structure and source/drain regions, while the second transistor operates in an inversion mode and has a gate structure with more metal layers. The first word line is connected to the first transistor's gate structure, the second word line is connected to the second transistor's gate structure, and the bit line is connected to the first transistor's source/drain region.

• The memory device is an OTP memory, meaning it can be programmed only once.
• The device includes two transistors, each with a gate structure and source/drain regions.
• The second transistor has a gate structure with more metal layers than the first transistor.
• The first word line is connected to the first transistor's gate structure.
• The second word line is connected to the second transistor's gate structure.
• The bit line is connected to the first transistor's source/drain region.

Potential Applications

• OTP memory devices can be used in various electronic systems, such as microcontrollers, smart cards, and secure storage devices.
• The technology can be applied in systems that require secure storage of sensitive data, as OTP memory provides a high level of data protection.

Problems Solved

• The OTP memory device solves the problem of data security by allowing data to be programmed only once, preventing unauthorized modifications.
• The use of two transistors with different gate structures enhances the security of the memory device, making it more resistant to tampering or reverse engineering attempts.

Benefits

• The OTP memory device provides a high level of data security by allowing data to be programmed only once.
• The use of a second transistor with a gate structure having more metal layers enhances the security of the memory device.
• The device is suitable for applications that require secure storage of sensitive data, providing a reliable solution for data protection.

Original Abstract Submitted

An OTP memory device includes a substrate, a first transistor, a second transistor, a first word line, second word line, and a bit line. The first transistor includes a first gate structure, and first and second source/drain regions on opposite sides of the first gate structure. The second transistor is operable in an inversion mode, and the second transistor includes a second gate structure having more work function metal layers than the first gate structure of the first transistor, and second and third source/drain regions on opposite sides of the second gate structure. The first word line is over and electrically connected to the first gate structure of the first transistor. The second word line is over and electrically connected to the second gate structure of the second transistor. The bit line is over and electrically connected to the first source/drain region of the first transistor.