17460709. SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Ting-Li Yang of Tainan City (TW)
Wen-Hsiung Lu of Tainan City (TW)
Lung-Kai Mao of Kaohsiung City (TW)
Mirng-Ji Lii of Hsinchu County (TW)
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17460709 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
Simplified Explanation
The abstract describes a method for forming a semiconductor device structure. Here is a simplified explanation of the abstract:
- The method starts with a chip structure that includes a substrate and a wiring structure on the substrate.
- A portion of the wiring structure adjacent to a hole is removed to widen the hole.
- A first seed layer is formed over the wiring structure and in the hole.
- The substrate is thinned from the other side until the first seed layer in the hole is exposed.
- A second seed layer is formed over the exposed first seed layer and the other side of the substrate.
Potential applications of this technology:
- Semiconductor device manufacturing
- Integrated circuit fabrication
Problems solved by this technology:
- Allows for the formation of a semiconductor device structure with a widened hole in the wiring structure.
- Enables the thinning of the substrate without damaging the first seed layer in the hole.
Benefits of this technology:
- Improved flexibility in designing and manufacturing semiconductor devices.
- Enhanced performance and functionality of integrated circuits.
- Enables the creation of more compact and efficient semiconductor devices.
Original Abstract Submitted
A method for forming a semiconductor device structure is provided. The method includes providing a chip structure including a substrate and a wiring structure over a first surface of the substrate. The method includes removing a first portion of the wiring structure adjacent to the hole to widen a second portion of the hole in the wiring structure. The second portion has a first width increasing in a first direction away from the substrate. The method includes forming a first seed layer over the wiring structure and in the hole. The method includes thinning the substrate from a second surface of the substrate until the first seed layer in the hole is exposed. The method includes forming a second seed layer over the second surface of the substrate and the first seed layer in the hole.
