View source for 17460324. MEMORY ARRAY, INTEGRATED CIRCUIT INCLUDING THE SAME, AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

=MEMORY ARRAY, INTEGRATED CIRCUIT INCLUDING THE SAME, AND MANUFACTURING METHOD THEREOF=


==Organization Name==

[[:Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.|TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]


[[Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]

==Inventor(s)==

[[:Category:Wei-Sheng Yun of Taipei City (TW)|Wei-Sheng Yun of Taipei City (TW)]][[Category:Wei-Sheng Yun of Taipei City (TW)]]

==MEMORY ARRAY, INTEGRATED CIRCUIT INCLUDING THE SAME, AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17460324 titled 'MEMORY ARRAY, INTEGRATED CIRCUIT INCLUDING THE SAME, AND MANUFACTURING METHOD THEREOF

==Simplified Explanation==

The abstract describes a memory array structure in a patent application. Here is a simplified explanation of the abstract:

* The memory array includes a first bit-line stack, a first spacer, a first data storage structure, and a word line.
* The first bit-line stack consists of a first bit line and a first hard mask layer partially covering the top surface of the first bit line.
* The first spacer is located on the lower sidewall of a first sidewall of the first bit line, exposing a top corner of the first bit line.
* The first data storage structure covers the exposed top corner of the first bit line.
* The word line covers a sidewall of the first data storage structure.

Potential applications of this technology:

* Memory arrays in electronic devices such as computers, smartphones, and tablets.
* Storage devices used in data centers and servers.

Problems solved by this technology:

* Improved memory array structure that enhances data storage and retrieval.
* More efficient use of space in memory arrays.

Benefits of this technology:

* Increased memory capacity and performance.
* Enhanced reliability and durability of memory arrays.
* Cost-effective manufacturing process for memory arrays.


==Original Abstract Submitted==

A memory array includes a first bit-line stack disposed over a substrate, a first spacer, a first data storage structure, and a word line. The first bit-line stack includes a first bit line disposed over the substrate; and a first hard mask layer partially covering a top surface of the first bit line. The first spacer is disposed on a lower sidewall of a first sidewall of the first bit line. The first hard mask layer and the first spacer expose a top corner of the first bit line. The first data storage structure covers the top corner of the first bit line. The word line covers a sidewall of the first data storage structure.



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