17460213. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Kuei-Yu Kao of Hsinchu City (TW)

Chao-Cheng Chen of Hsinchu City (TW)

Chih-Han Lin of Hsinchu City (TW)

Chen-Ping Chen of Toucheng Township (TW)

Ming-Ching Chang of Hsinchu City (TW)

Shih-Yao Lin of New Taipei City (TW)

Chih-Chung Chiu of Hsinchu City (TW)

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 17460213 titled 'SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Simplified Explanation

The abstract describes a semiconductor device that consists of multiple layers stacked vertically. The device includes a gate structure with a lower portion that wraps around each layer and an upper portion. A gate spacer extends along the sidewall of the upper portion and has a bottom surface. The bottom surface of the gate spacer and the top surface of the topmost layer form an angle less than 90 degrees.

• The semiconductor device has multiple vertically separated semiconductor layers.
• The gate structure of the device has a lower portion that wraps around each layer.
• The gate structure also has an upper portion.
• A gate spacer extends along the sidewall of the upper portion.
• The gate spacer has a bottom surface.
• The bottom surface of the gate spacer and the top surface of the topmost layer form an angle less than 90 degrees.

Potential Applications

• This technology can be used in the manufacturing of semiconductor devices.
• It can be applied in the development of advanced electronic devices and integrated circuits.

Problems Solved

• The design of the semiconductor device allows for better control and performance.
• The gate structure wrapping around each layer improves the efficiency of the device.
• The gate spacer provides additional stability and precision in the device's operation.

Benefits

• The vertical separation of semiconductor layers allows for compact and efficient device design.
• The gate structure and spacer enhance the performance and reliability of the device.
• The angle formed between the gate spacer and the top layer improves the functionality of the device.

Original Abstract Submitted

A semiconductor device includes a plurality of semiconductor layers vertically separated from one another. The semiconductor device includes a gate structure that comprises a lower portion and an upper portion, wherein the lower portion wraps around each of the plurality of semiconductor layers. The semiconductor device includes a gate spacer that extends along a sidewall of the upper portion of the gate structure and has a bottom surface. A portion of the bottom surface of the gate spacer and a top surface of a topmost one of the plurality of semiconductor layers form an angle that is less than 90 degrees.