View source for 17460198. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

=SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF=


==Organization Name==

[[:Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.|TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]


[[Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]

==Inventor(s)==

[[:Category:Ya-Yi Tsai of Hsinchu City (TW)|Ya-Yi Tsai of Hsinchu City (TW)]][[Category:Ya-Yi Tsai of Hsinchu City (TW)]]

[[:Category:Shih-Yao Lin of New Taipei City (TW)|Shih-Yao Lin of New Taipei City (TW)]][[Category:Shih-Yao Lin of New Taipei City (TW)]]

[[:Category:Chi-Hsiang Chang of Hsinchu (TW)|Chi-Hsiang Chang of Hsinchu (TW)]][[Category:Chi-Hsiang Chang of Hsinchu (TW)]]

[[:Category:Wei-Han Chen of Hsinchu (TW)|Wei-Han Chen of Hsinchu (TW)]][[Category:Wei-Han Chen of Hsinchu (TW)]]

[[:Category:Shu-Yuan Ku of Zhubei City (TW)|Shu-Yuan Ku of Zhubei City (TW)]][[Category:Shu-Yuan Ku of Zhubei City (TW)]]

==SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17460198 titled 'SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

==Simplified Explanation==

The patent application describes a method for fabricating a semiconductor device. Here are the key points:

* The method involves forming a substrate and creating a plurality of fins that extend from the substrate. These fins include active fins in an active region and an inactive fin in an inactive region.
* The active fins are separated by first trench regions, while the inactive fin is separated from its closest active fin by a second trench region. The second trench region is wider than the first trench regions.
* A dummy fin is formed on the isolation dielectric in the second trench region. This dummy fin is positioned between the active fins and the inactive fin.
* A dummy gate is then formed over the fins, and a gate isolation structure is placed between the dummy fin and the inactive fin. This structure separates different regions of the dummy gate.

Potential applications of this technology:

* This method can be used in the fabrication of various semiconductor devices, such as transistors, integrated circuits, and microprocessors.
* It can be applied in the manufacturing of electronic devices like smartphones, computers, and other consumer electronics.

Problems solved by this technology:

* The method addresses the challenge of efficiently fabricating semiconductor devices with active and inactive regions.
* It solves the problem of effectively isolating the inactive fin from the active fins and the dummy gate.

Benefits of this technology:

* The method allows for the simplified fabrication of semiconductor devices with active and inactive regions.
* It provides improved isolation between the active and inactive regions, enhancing the performance and reliability of the semiconductor device.
* The use of dummy fins and gates helps optimize the design and functionality of the device.


==Original Abstract Submitted==

A method of fabricating a semiconductor device is described. A substrate is provided. A plurality of fins is formed extending from the substrate, the fins including a first group of active fins arranged in an active region, and including an inactive fin having at least a portion in an inactive region, the active fins separated by first trench regions between adjacent of the active regions, the inactive fin separated from its closest active fin by a second trench region, the second trench region having a greater width than that of a trench region of the first trench regions. A dummy fin is formed on the isolation dielectric in the second trench region, the dummy fin disposed between the first group of active fins and the inactive fin. A dummy gate is formed over the fins. The gate isolation structure is disposed between the dummy fin and the inactive fin and separates regions of the dummy gate.



[[Category:H01L27/088]]
[[Category:H01L21/8234]]