View source for 17460049. FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

=FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME=


==Organization Name==

[[:Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.|TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]


[[Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]

==Inventor(s)==

[[:Category:Yi-Chun Chen of Hsinchu City (TW)|Yi-Chun Chen of Hsinchu City (TW)]][[Category:Yi-Chun Chen of Hsinchu City (TW)]]

[[:Category:Jih-Jse Lin of Sijhih City (TW)|Jih-Jse Lin of Sijhih City (TW)]][[Category:Jih-Jse Lin of Sijhih City (TW)]]

[[:Category:Ryan Chia-Jen Chen of Hsinchu City (TW)|Ryan Chia-Jen Chen of Hsinchu City (TW)]][[Category:Ryan Chia-Jen Chen of Hsinchu City (TW)]]

==FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17460049 titled 'FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

==Simplified Explanation==

The patent application describes a semiconductor device that includes a substrate, two fin structures, and two gate structures. The device also includes a dielectric cut structure that separates the gate structures from each other.

* The semiconductor device includes a substrate, two fin structures, and two gate structures.
* The dielectric cut structure separates the gate structures from each other.
* The dielectric cut structure extends into the substrate and has two portions.
* The width of the first portion increases with increasing depth into the substrate.
* The width of the second portion decreases with increasing depth into the substrate.
* The second portion is located below the first portion.

Potential applications of this technology:

* Semiconductor manufacturing
* Integrated circuits
* Electronics industry

Problems solved by this technology:

* Improved performance and efficiency of semiconductor devices
* Enhanced control and isolation of gate structures

Benefits of this technology:

* Increased functionality and reliability of semiconductor devices
* Improved manufacturing processes and yield
* Enhanced performance and efficiency of electronic devices


==Original Abstract Submitted==

A semiconductor device includes a substrate; a first fin structure extending along a first lateral direction; a second fin structure extending along the first lateral direction; a first gate structure extending along a second lateral direction and straddles the first fin structure; a second gate structure extending along the second lateral direction and straddles the second fin structure. The semiconductor device further includes a dielectric cut structure that separates the first and second gate structures from each other. The dielectric cut structure extends into the substrate and comprises a first portion and a second portion. A width of the first portion along the second lateral direction increases with increasing depth into the substrate and a width of the second portion along the second lateral direction decreases with increasing depth into the substrate. The second portion is located below the first portion.



[[Category:H01L27/088]]
[[Category:H01L29/66]]
[[Category:H01L29/78]]
[[Category:H01L29/06]]
[[Category:H01L21/8234]]
[[Category:H01L21/306]]