17459865. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Shih-Yao Lin of New Taipei City (TW)
Chih-Han Lin of Hsinchu City (TW)
Chen-Ping Chen of Toucheng Township (TW)
Hsiao Wen Lee of Hsinchu City (TW)
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 17459865 titled 'SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
Simplified Explanation
The patent application describes a semiconductor device that consists of three stack structures made of semiconductor layers. These stack structures are vertically spaced from each other and extend along a first lateral direction. The second stack structure is positioned between the first and third stack structures. The device also includes a first gate structure that wraps around each of the semiconductor layers and extends along a second lateral direction. The semiconductor layers of the first and second stack structures are connected to respective source/drain structures, while the semiconductor layers of the third stack structure are connected to a dielectric passivation layer.
- The semiconductor device has three stack structures made of vertically spaced semiconductor layers.
- The second stack structure is positioned between the first and third stack structures.
- A first gate structure wraps around each of the semiconductor layers and extends along a different lateral direction.
- The semiconductor layers of the first and second stack structures are connected to respective source/drain structures.
- The semiconductor layers of the third stack structure are connected to a dielectric passivation layer.
Potential Applications
- Integrated circuits
- Microprocessors
- Memory devices
- Power electronics
Problems Solved
- Improved performance and functionality of semiconductor devices
- Enhanced integration of components
- Increased efficiency and reliability
Benefits
- Higher density of components
- Improved electrical performance
- Reduced power consumption
- Enhanced reliability and durability
Original Abstract Submitted
A semiconductor device includes a first stack structure, a second stack structure, and a third stack structure. Each of the stack structure includes semiconductor layers vertically spaced from one another. The first, second, and third stack structures all extend along a first lateral direction. The second stack structure is disposed between the first and third stack structures. The semiconductor device includes a first gate structure that extends along a second lateral direction and wraps around each of the semiconductor layers. The semiconductor layers of the first stack structure are coupled with respective source/drain structures. The semiconductor layers of the second stack structure are coupled with respective source/drain structures. The semiconductor layers of the third stack structure are coupled with a dielectric passivation layer.
