17459855. GATE-ALL-AROUND DEVICES WITH SUPERLATTICE CHANNEL simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
GATE-ALL-AROUND DEVICES WITH SUPERLATTICE CHANNEL
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Shin-Cheng Liu of Hsinchu (TW)
Kuei-Shu Chang Liao of Hsinchu (TW)
GATE-ALL-AROUND DEVICES WITH SUPERLATTICE CHANNEL - A simplified explanation of the abstract
This abstract first appeared for US patent application 17459855 titled 'GATE-ALL-AROUND DEVICES WITH SUPERLATTICE CHANNEL
Simplified Explanation
The patent application describes a semiconductor structure that includes a substrate, two superlattice structures, a gate stack, and source/drain structures. The second superlattice structure is placed over the first superlattice structure. Each superlattice structure consists of alternating nanosheets of different semiconductor materials.
- The semiconductor structure includes a substrate, two superlattice structures, a gate stack, and source/drain structures.
- The second superlattice structure is positioned over the first superlattice structure.
- Each superlattice structure is made up of alternating nanosheets of different semiconductor materials.
- The gate stack surrounds the channel region of each superlattice structure.
- The source/drain structures are in contact with the sidewalls of the superlattice structures.
Potential applications of this technology:
- Semiconductor devices and integrated circuits
- High-performance transistors
- Optoelectronic devices
- Quantum computing
Problems solved by this technology:
- Enhances the performance and efficiency of semiconductor devices
- Enables the fabrication of smaller and faster transistors
- Improves the functionality of optoelectronic devices
- Facilitates the development of quantum computing technologies
Benefits of this technology:
- Improved performance and efficiency of semiconductor devices
- Increased speed and functionality of transistors
- Enhanced capabilities of optoelectronic devices
- Advancement in the field of quantum computing
Original Abstract Submitted
A semiconductor structure is provided. The semiconductor structure includes a substrate, a first superlattice structure and a second superlattice structure over the substrate, a gate stack that surrounds a channel region of each of the first superlattice structures and the second superlattice structure, and source/drain structures on opposite sides of the gate stack contacting sidewalls of the first superlattice structure and the second superlattice structure. The second superlattice structure is disposed over the first superlattice structure. Each of the first superlattice structures and the second superlattice structure includes vertically stacked alternating first nanosheets of a first semiconductor material and second nanosheets of a second semiconductor material that is different from the first semiconductor material.
