17459799. CONTACT STRUCTURE FOR SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
CONTACT STRUCTURE FOR SEMICONDUCTOR DEVICE
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Chia-Hung Chu of Taipei City (TW)
Shuen-Shin Liang of Hsinchu County (TW)
Keng-Chu Lin of Ping-Tung (TW)
Sung-Li Wang of Zhubei City (TW)
CONTACT STRUCTURE FOR SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17459799 titled 'CONTACT STRUCTURE FOR SEMICONDUCTOR DEVICE
Simplified Explanation
The present disclosure describes a semiconductor structure and a method for forming the same. The structure includes a substrate, a gate structure, a source/drain contact structure, a layer of dielectric material, a layer of organometallic material, and a trench conductor layer.
- The semiconductor structure includes a substrate, which serves as a foundation for the other components.
- A gate structure is positioned over the substrate, providing control over the flow of current in the semiconductor.
- Adjacent to the gate structure is a source/drain contact structure, which facilitates the connection between the gate and the rest of the circuit.
- A layer of dielectric material is placed over both the source/drain contact structure and the gate structure, providing insulation.
- Through this layer of dielectric material, a layer of organometallic material is formed, which can enhance the conductivity of the semiconductor.
- Finally, a trench conductor layer is formed through the layer of dielectric material, making contact with both the source/drain contact structure and the gate structure.
Potential Applications
This semiconductor structure and method for forming it can have various applications in the field of electronics and semiconductor devices. Some potential applications include:
- Integrated circuits: The structure can be used in the fabrication of integrated circuits, enabling the creation of smaller and more efficient electronic devices.
- Transistors: The gate structure and source/drain contact structure are essential components of transistors, making this technology applicable in the development of advanced transistors.
- Power electronics: The enhanced conductivity provided by the layer of organometallic material can be beneficial in power electronic devices, improving their efficiency and performance.
Problems Solved
This technology addresses several challenges in semiconductor device fabrication:
- Improved conductivity: The layer of organometallic material enhances the conductivity of the semiconductor, addressing the issue of high resistance and improving the overall performance of the device.
- Insulation and isolation: The layer of dielectric material provides insulation and isolation between different components of the semiconductor structure, preventing unwanted electrical interactions.
- Miniaturization: The structure allows for the creation of smaller and more compact devices, addressing the need for miniaturization in the electronics industry.
Benefits
The semiconductor structure and method described in this patent application offer several benefits:
- Enhanced performance: The use of organometallic material and the improved conductivity it provides can lead to higher performance and efficiency in semiconductor devices.
- Versatility: The structure can be applied to various types of semiconductor devices, making it a versatile solution for different applications.
- Miniaturization: The ability to create smaller devices allows for more compact and portable electronic products.
- Improved insulation: The layer of dielectric material ensures proper insulation and isolation between different components, reducing the risk of electrical interference.
Original Abstract Submitted
The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a gate structure over the substrate, a source/drain (S/D) contact structure adjacent to the gate structure, a layer of dielectric material over the S/D contact structure and over the gate structure, a layer of organometallic material formed through the layer of dielectric material, and a trench conductor layer formed through the layer of dielectric material and in contact with the S/D contact structure and the gate structure. The layer of organometallic material can be between the layer of dielectric material and the trench conductor layer.
