View source for 17459043. Systems, Methods, and Semiconductor Devices simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

=Systems, Methods, and Semiconductor Devices=


==Organization Name==

[[:Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.|TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]


[[Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]

==Inventor(s)==

[[:Category:Tz-Shian Chen of Hsinchu (TW)|Tz-Shian Chen of Hsinchu (TW)]][[Category:Tz-Shian Chen of Hsinchu (TW)]]

[[:Category:Li-Ting Wang of Hsinchu (TW)|Li-Ting Wang of Hsinchu (TW)]][[Category:Li-Ting Wang of Hsinchu (TW)]]

[[:Category:Yee-Chia Yeo of Hsinchu (TW)|Yee-Chia Yeo of Hsinchu (TW)]][[Category:Yee-Chia Yeo of Hsinchu (TW)]]

==Systems, Methods, and Semiconductor Devices - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17459043 titled 'Systems, Methods, and Semiconductor Devices

==Simplified Explanation==

The patent application describes a method of manufacturing a semiconductor device using laser annealing. The method involves determining the reflectivity of different anneal regions on a wafer and adjusting the power of laser shots accordingly. The temperature of the anneal regions is measured during the process.

* The method involves determining the reflectivity of anneal regions on a wafer.
* Laser shots are performed on the anneal regions based on their reflectivity.
* The power of the laser shots is adjusted according to the reflectivity of the anneal regions.
* The temperature of the anneal regions is measured during the process.

==Potential Applications==
* Manufacturing of semiconductor devices
* Semiconductor fabrication processes

==Problems Solved==
* Controlling the power of laser shots during annealing processes
* Ensuring consistent temperature in different anneal regions

==Benefits==
* Improved control over the annealing process
* Enhanced uniformity in the temperature of anneal regions
* Increased efficiency in semiconductor manufacturing


==Original Abstract Submitted==

A method of manufacturing a semiconductor device includes: determining a first reflectivity of a first anneal region on a wafer; determining a second reflectivity of a second anneal region on the wafer, performing a first laser shot on the first anneal region, measuring a first temperature of the first anneal region, and performing a second laser shot on a second anneal region. A power of the first laser shot is set in accordance with the first reflectivity. A power of the second laser shot is set in accordance with the second reflectivity.



[[Category:H01L21/324]]
[[Category:H01L21/66]]