17457926. CROSSBAR MEMORY ARRAY IN FRONT END OF LINE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

CROSSBAR MEMORY ARRAY IN FRONT END OF LINE

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Devendra K. Sadana of Pleasantville NY (US)

Ning Li of White Plains NY (US)

Bahman Hekmatshoartabari of White Plains NY (US)

CROSSBAR MEMORY ARRAY IN FRONT END OF LINE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17457926 titled 'CROSSBAR MEMORY ARRAY IN FRONT END OF LINE

Simplified Explanation

The patent application describes a structure consisting of a bottom electrode, a phase change material layer, a top electrode, and a dielectric material. The phase change material layer has a similar lattice constant as the substrate.

• The structure includes a bottom electrode, phase change material layer, top electrode, and dielectric material.
• The phase change material layer has a lattice constant similar to the substrate.
• The bottom electrode is horizontally isolated from the top electrode and the phase change material layer by the dielectric material.
• The phase change material layer can be selected from amorphous silicon, amorphous germanium, or amorphous silicon germanium.

Potential applications of this technology:

• Non-volatile memory devices
• Optical storage devices
• Reconfigurable logic devices
• Phase change random access memory (PRAM)
• Resistive random access memory (RRAM)

Problems solved by this technology:

• Improved compatibility between the lattice constants of the phase change material layer and the substrate, reducing strain and improving device performance.
• Horizontal isolation of the electrodes and phase change material layer prevents unwanted electrical interactions.

Benefits of this technology:

• Enhanced device performance and reliability
• Increased compatibility with existing fabrication processes
• Potential for higher density memory devices
• Improved energy efficiency

Original Abstract Submitted

A structure including a bottom electrode, a phase change material layer, the phase change material layer includes a similar lattice constant as a lattice constant of the substrate, a top electrode on and vertically aligned with the phase change material layer, a dielectric material horizontally isolating the bottom electrode from the top electrode and the phase change material layer. A structure including a phase change material layer selected from amorphous silicon, amorphous germanium and amorphous silicon germanium, a top electrode on the phase change material layer, a bottom electrode, a dielectric material isolating the bottom electrode from the top electrode and the phase change material layer. Forming a bottom electrode, forming a phase change material layer adjacent to the bottom electrode, forming a top electrode above the phase change material, forming a dielectric material horizontally isolating the bottom electrode from the top electrode and the phase change material layer.