View source for 17455737. SELF-ALIGNED CROSSBAR-COMPATIBLE ELECTROCHEMICAL MEMORY STRUCTURE simplified abstract (International Business Machines Corporation)

=SELF-ALIGNED CROSSBAR-COMPATIBLE ELECTROCHEMICAL MEMORY STRUCTURE=


==Organization Name==

[[:Category:International Business Machines Corporation|International Business Machines Corporation]]


[[Category:International Business Machines Corporation]]

==Inventor(s)==

[[:Category:John Rozen of Hastings on Hudson NY (US)|John Rozen of Hastings on Hudson NY (US)]][[Category:John Rozen of Hastings on Hudson NY (US)]]

==SELF-ALIGNED CROSSBAR-COMPATIBLE ELECTROCHEMICAL MEMORY STRUCTURE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17455737 titled 'SELF-ALIGNED CROSSBAR-COMPATIBLE ELECTROCHEMICAL MEMORY STRUCTURE

==Simplified Explanation==

'''Abstract:'''
The patent application describes a memory structure that includes various components such as a top terminal, a multi-level nonvolatile electrochemical cell, a bottom terminal, a pedestal contact, and a vertical conductor. 

* The memory structure consists of a top terminal, a multi-level nonvolatile electrochemical cell, a bottom terminal, a pedestal contact, and a vertical conductor.
* The multi-level nonvolatile electrochemical cell is fully self-aligned to the vertical conductor.
* The pedestal contact is located in the same metal level as the bottom terminal.
* The vertical conductor extends vertically from the pedestal contact.

'''Potential Applications:'''
* Memory storage devices
* Computer systems
* Electronic devices requiring nonvolatile memory

'''Problems Solved:'''
* Provides a memory structure with improved performance and reliability
* Enables efficient storage and retrieval of data in memory devices
* Enhances the overall functionality of computer systems and electronic devices

'''Benefits:'''
* Improved performance and reliability of memory structures
* Efficient storage and retrieval of data
* Enhanced functionality of computer systems and electronic devices


==Original Abstract Submitted==

A memory structure is provided. The memory structure includes a top terminal, a multi-level nonvolatile electrochemical cell, a bottom terminal, a pedestal contact in the same metal level as the bottom terminal, and a vertical conductor fully self-aligned to the multi-level nonvolatile electrochemical cell and extending vertically from the pedestal contact.



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