17455737. SELF-ALIGNED CROSSBAR-COMPATIBLE ELECTROCHEMICAL MEMORY STRUCTURE simplified abstract (International Business Machines Corporation)
Contents
SELF-ALIGNED CROSSBAR-COMPATIBLE ELECTROCHEMICAL MEMORY STRUCTURE
Organization Name
International Business Machines Corporation
Inventor(s)
John Rozen of Hastings on Hudson NY (US)
SELF-ALIGNED CROSSBAR-COMPATIBLE ELECTROCHEMICAL MEMORY STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17455737 titled 'SELF-ALIGNED CROSSBAR-COMPATIBLE ELECTROCHEMICAL MEMORY STRUCTURE
Simplified Explanation
Abstract: The patent application describes a memory structure that includes various components such as a top terminal, a multi-level nonvolatile electrochemical cell, a bottom terminal, a pedestal contact, and a vertical conductor.
- The memory structure consists of a top terminal, a multi-level nonvolatile electrochemical cell, a bottom terminal, a pedestal contact, and a vertical conductor.
- The multi-level nonvolatile electrochemical cell is fully self-aligned to the vertical conductor.
- The pedestal contact is located in the same metal level as the bottom terminal.
- The vertical conductor extends vertically from the pedestal contact.
Potential Applications:
- Memory storage devices
- Computer systems
- Electronic devices requiring nonvolatile memory
Problems Solved:
- Provides a memory structure with improved performance and reliability
- Enables efficient storage and retrieval of data in memory devices
- Enhances the overall functionality of computer systems and electronic devices
Benefits:
- Improved performance and reliability of memory structures
- Efficient storage and retrieval of data
- Enhanced functionality of computer systems and electronic devices
Original Abstract Submitted
A memory structure is provided. The memory structure includes a top terminal, a multi-level nonvolatile electrochemical cell, a bottom terminal, a pedestal contact in the same metal level as the bottom terminal, and a vertical conductor fully self-aligned to the multi-level nonvolatile electrochemical cell and extending vertically from the pedestal contact.
