17455226. EMBEDDED MAGNETORESISTIVE RANDOM ACCESS MEMORY TOP ELECTRODE STRUCTURE simplified abstract (International Business Machines Corporation)

EMBEDDED MAGNETORESISTIVE RANDOM ACCESS MEMORY TOP ELECTRODE STRUCTURE

Organization Name

International Business Machines Corporation

Inventor(s)

Ashim Dutta of Clifton Park NY (US)

Chih-Chao Yang of Glenmont NY (US)

EMBEDDED MAGNETORESISTIVE RANDOM ACCESS MEMORY TOP ELECTRODE STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17455226 titled 'EMBEDDED MAGNETORESISTIVE RANDOM ACCESS MEMORY TOP ELECTRODE STRUCTURE

Simplified Explanation

The patent application describes a method to enhance the performance of a pillar-type memory device by adding a bump of conductive material on the top electrode. Here are the key points:

• The top electrode of the pillar-type memory device is made of a thin layer of electrode material.
• A bump of conductive material is added on top of the electrode, increasing its height after the formation of the memory device.
• The bump is semi-sphere-like and slightly wider than the top electrode.
• A contact is made to connect with the bump of conductive material on the top electrode.

Potential Applications

This technology can be applied in various memory devices, such as:

• Non-volatile memory devices (e.g., flash memory)
• Resistive random-access memory (RRAM)
• Phase-change memory (PCM)
• Magnetic random-access memory (MRAM)

Problems Solved

The innovation addresses the following issues:

• Improves the performance and reliability of pillar-type memory devices.
• Enhances the electrical contact between the top electrode and other components.
• Reduces resistance and improves signal transmission in the memory device.

Benefits

The benefits of this technology include:

• Increased memory device performance and reliability.
• Improved electrical contact and signal transmission.
• Enhanced data retention and durability.
• Potential for higher memory density and storage capacity.

Original Abstract Submitted

An approach to provide a pillar-type memory device with a bump of a conductive material on a top electrode of the pillar-type memory device. The top electrode is composed of a thin layer of the top electrode material. The bump of the conductive material increases the height of the top electrode after pillar formation for the pillar-type memory device. The pillar-type memory device includes the bump of the conductive material with a semi-sphere-like bump of the conductive metal that is slightly wider than the top electrode of the pillar-type memory device. A contact connects with the bump of the conductive material on the top electrode.