17455226. EMBEDDED MAGNETORESISTIVE RANDOM ACCESS MEMORY TOP ELECTRODE STRUCTURE simplified abstract (International Business Machines Corporation)

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EMBEDDED MAGNETORESISTIVE RANDOM ACCESS MEMORY TOP ELECTRODE STRUCTURE

Organization Name

International Business Machines Corporation

Inventor(s)

Ashim Dutta of Clifton Park NY (US)

Chih-Chao Yang of Glenmont NY (US)

EMBEDDED MAGNETORESISTIVE RANDOM ACCESS MEMORY TOP ELECTRODE STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17455226 titled 'EMBEDDED MAGNETORESISTIVE RANDOM ACCESS MEMORY TOP ELECTRODE STRUCTURE

Simplified Explanation

The patent application describes a method to enhance the performance of a pillar-type memory device by adding a bump of conductive material on the top electrode. Here are the key points:

  • The top electrode of the pillar-type memory device is made of a thin layer of electrode material.
  • A bump of conductive material is added on top of the electrode, increasing its height after the formation of the memory device.
  • The bump is semi-sphere-like and slightly wider than the top electrode.
  • A contact is made to connect with the bump of conductive material on the top electrode.

Potential Applications

This technology can be applied in various memory devices, such as:

  • Non-volatile memory devices (e.g., flash memory)
  • Resistive random-access memory (RRAM)
  • Phase-change memory (PCM)
  • Magnetic random-access memory (MRAM)

Problems Solved

The innovation addresses the following issues:

  • Improves the performance and reliability of pillar-type memory devices.
  • Enhances the electrical contact between the top electrode and other components.
  • Reduces resistance and improves signal transmission in the memory device.

Benefits

The benefits of this technology include:

  • Increased memory device performance and reliability.
  • Improved electrical contact and signal transmission.
  • Enhanced data retention and durability.
  • Potential for higher memory density and storage capacity.


Original Abstract Submitted

An approach to provide a pillar-type memory device with a bump of a conductive material on a top electrode of the pillar-type memory device. The top electrode is composed of a thin layer of the top electrode material. The bump of the conductive material increases the height of the top electrode after pillar formation for the pillar-type memory device. The pillar-type memory device includes the bump of the conductive material with a semi-sphere-like bump of the conductive metal that is slightly wider than the top electrode of the pillar-type memory device. A contact connects with the bump of the conductive material on the top electrode.

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