View source for 17455226. EMBEDDED MAGNETORESISTIVE RANDOM ACCESS MEMORY TOP ELECTRODE STRUCTURE simplified abstract (International Business Machines Corporation)

=EMBEDDED MAGNETORESISTIVE RANDOM ACCESS MEMORY TOP ELECTRODE STRUCTURE=


==Organization Name==

[[:Category:International Business Machines Corporation|International Business Machines Corporation]]


[[Category:International Business Machines Corporation]]

==Inventor(s)==

[[:Category:Ashim Dutta of Clifton Park NY (US)|Ashim Dutta of Clifton Park NY (US)]][[Category:Ashim Dutta of Clifton Park NY (US)]]

[[:Category:Chih-Chao Yang of Glenmont NY (US)|Chih-Chao Yang of Glenmont NY (US)]][[Category:Chih-Chao Yang of Glenmont NY (US)]]

==EMBEDDED MAGNETORESISTIVE RANDOM ACCESS MEMORY TOP ELECTRODE STRUCTURE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17455226 titled 'EMBEDDED MAGNETORESISTIVE RANDOM ACCESS MEMORY TOP ELECTRODE STRUCTURE

==Simplified Explanation==

The patent application describes a method to enhance the performance of a pillar-type memory device by adding a bump of conductive material on the top electrode. Here are the key points:

* The top electrode of the pillar-type memory device is made of a thin layer of electrode material.
* A bump of conductive material is added on top of the electrode, increasing its height after the formation of the memory device.
* The bump is semi-sphere-like and slightly wider than the top electrode.
* A contact is made to connect with the bump of conductive material on the top electrode.

== Potential Applications ==
This technology can be applied in various memory devices, such as:

* Non-volatile memory devices (e.g., flash memory)
* Resistive random-access memory (RRAM)
* Phase-change memory (PCM)
* Magnetic random-access memory (MRAM)

== Problems Solved ==
The innovation addresses the following issues:

* Improves the performance and reliability of pillar-type memory devices.
* Enhances the electrical contact between the top electrode and other components.
* Reduces resistance and improves signal transmission in the memory device.

== Benefits ==
The benefits of this technology include:

* Increased memory device performance and reliability.
* Improved electrical contact and signal transmission.
* Enhanced data retention and durability.
* Potential for higher memory density and storage capacity.


==Original Abstract Submitted==

An approach to provide a pillar-type memory device with a bump of a conductive material on a top electrode of the pillar-type memory device. The top electrode is composed of a thin layer of the top electrode material. The bump of the conductive material increases the height of the top electrode after pillar formation for the pillar-type memory device. The pillar-type memory device includes the bump of the conductive material with a semi-sphere-like bump of the conductive metal that is slightly wider than the top electrode of the pillar-type memory device. A contact connects with the bump of the conductive material on the top electrode.



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