17454378. DAMASCENE INTERCONNECT SPACER TO FACILITATE GAP FILL simplified abstract (International Business Machines Corporation)

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DAMASCENE INTERCONNECT SPACER TO FACILITATE GAP FILL

Organization Name

International Business Machines Corporation

Inventor(s)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Timothy Mathew Philip of Albany NY (US)

Kevin W. Brew of Niskayuna NY (US)

DAMASCENE INTERCONNECT SPACER TO FACILITATE GAP FILL - A simplified explanation of the abstract

This abstract first appeared for US patent application 17454378 titled 'DAMASCENE INTERCONNECT SPACER TO FACILITATE GAP FILL

Simplified Explanation

The abstract describes a semiconductor component that includes multiple layers arranged in an opening. These layers include a dielectric layer, a liner, a wetting layer, an interconnect structure, and a cap. The wetting layer is separated from the cap by a spacer.

  • The semiconductor component includes a dielectric layer with an opening.
  • A liner is placed in the opening in direct contact with the dielectric layer.
  • A wetting layer is also placed in the opening in direct contact with the liner.
  • An interconnect structure is arranged in the opening in direct contact with the wetting layer.
  • A cap is placed in the opening in direct contact with the interconnect structure and separated from the wetting layer by a spacer.

Potential applications of this technology:

  • Semiconductor manufacturing
  • Integrated circuits
  • Electronic devices

Problems solved by this technology:

  • Provides a structure for efficient interconnects in a semiconductor component
  • Helps to improve the performance and reliability of electronic devices

Benefits of this technology:

  • Enables better integration of different layers in a semiconductor component
  • Enhances the electrical properties and functionality of the component
  • Improves the overall performance and reliability of electronic devices.


Original Abstract Submitted

A semiconductor component includes a dielectric layer including an opening. The semiconductor component further includes a liner arranged in the opening in direct contact with the dielectric layer. The semiconductor component further includes a wetting layer arranged in the opening in direct contact with the liner. The semiconductor component further includes an interconnect structure arranged in the opening in direct contact with the wetting layer. The semiconductor component further includes a cap arranged in the opening in direct contact with the interconnect structure and separated from the wetting layer by a spacer.

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