17443186. ATOMIC LAYER DEPOSITION BONDING LAYER FOR JOINING TWO SEMICONDUCTOR DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

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ATOMIC LAYER DEPOSITION BONDING LAYER FOR JOINING TWO SEMICONDUCTOR DEVICES

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Kuang-Wei Cheng of Hsinchu City (TW)

Chyi-Tsong Ni of Hsinchu City (TW)

ATOMIC LAYER DEPOSITION BONDING LAYER FOR JOINING TWO SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 17443186 titled 'ATOMIC LAYER DEPOSITION BONDING LAYER FOR JOINING TWO SEMICONDUCTOR DEVICES

Simplified Explanation

The abstract describes a method for bonding two semiconductor devices using atomic layer deposition (ALD) bonding layers. The method involves forming a bonding layer on each device's surface and then joining them together. An annealing operation is performed to fuse the bonding layers and create a single bonding layer that securely bonds the two devices.

  • The method involves using ALD bonding layers to join semiconductor devices.
  • A first bonding layer is formed on the surface of the first device, and a second bonding layer is formed on the surface of the second device.
  • The first and second devices are then joined together using the bonding layers.
  • An annealing operation is performed to fuse the bonding layers and create a single, strong bonding layer that connects the two devices.

Potential Applications

  • This method can be used in the manufacturing of various semiconductor devices, such as integrated circuits, microprocessors, and memory chips.
  • It can enable the integration of different semiconductor devices into a single package, improving performance and functionality.

Problems Solved

  • Traditional bonding methods may not provide sufficient strength and reliability for bonding semiconductor devices.
  • This method solves the problem of weak bonding by using ALD bonding layers and an annealing process to create a strong and reliable bond.

Benefits

  • The use of ALD bonding layers ensures a precise and uniform bonding interface, leading to improved device performance.
  • The annealing operation further enhances the strength and reliability of the bond.
  • This method allows for the bonding of different semiconductor devices, enabling the creation of more complex and advanced electronic systems.


Original Abstract Submitted

A method may include forming a first atomic layer deposition (ALD) bonding layer on a surface of a first semiconductor device, and forming a second ALD bonding layer on a surface of a second semiconductor device. The method may include joining the first semiconductor device and the second semiconductor device via the first ALD bonding layer and the second ALD bonding layer. The method may include performing an annealing operation to fuse the first ALD bonding layer and the second ALD bonding layer and form a single ALD bonding layer that bonds the first semiconductor device with the second semiconductor device.

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