17412622. DOUBLE-SIDED STACKED DTC STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

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DOUBLE-SIDED STACKED DTC STRUCTURE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Ming Chyi Liu of Hsinchu City (TW)

DOUBLE-SIDED STACKED DTC STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17412622 titled 'DOUBLE-SIDED STACKED DTC STRUCTURE

Simplified Explanation

The abstract describes an integrated circuit (IC) that includes multiple layers and structures for improved performance and functionality. Here are the key points:

  • The IC has a first insulating layer with a metal interconnect structure and a bottom die.
  • A substrate is placed above the first insulating layer.
  • A second metal interconnect structure is positioned above the substrate.
  • A through-substrate via (TSV) directly connects the first and second metal interconnect structures.
  • The IC also includes a stacked deep trench capacitor (DTC) structure in the substrate.
  • The DTC structure consists of two sets of trenches extending from opposite sides of the substrate.

Potential applications of this technology:

  • This IC design can be used in various electronic devices, such as smartphones, tablets, and computers.
  • It can be applied in high-performance computing systems, data centers, and networking equipment.
  • The technology can also be utilized in automotive electronics, IoT devices, and aerospace systems.

Problems solved by this technology:

  • The integration of multiple layers and structures improves the performance and functionality of the IC.
  • The through-substrate via (TSV) enables direct connections between different metal interconnect structures, reducing signal delays and improving overall circuit efficiency.
  • The stacked deep trench capacitor (DTC) structure provides increased capacitance, which is beneficial for storing and supplying electrical energy in the IC.

Benefits of this technology:

  • The improved performance and functionality of the IC can lead to faster and more efficient electronic devices.
  • The direct connections between metal interconnect structures reduce signal delays, enhancing the speed and reliability of the circuit.
  • The increased capacitance provided by the stacked deep trench capacitor (DTC) structure improves the energy storage and supply capabilities of the IC.


Original Abstract Submitted

In some embodiments, the present disclosure relates to an integrated circuit (IC), including a first insulating layer which includes a first metal interconnect structure stacked above a bottom die. Including a substrate disposed above the first insulating layer, a second metal interconnect structure disposed above the substrate, a through-substrate via (TSV) directly connecting the first metal interconnect structure to the second metal interconnect structure, and a stacked deep trench capacitor (DTC) structure disposed in the substrate. The DTC structure includes a first plurality of trenches extending from a first side of the substrate and a second plurality of trenches extending from a second side of the substrate.

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