17383690. SEMICONDUCTOR STRUCTURE AND METHOD FOR MAKING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

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SEMICONDUCTOR STRUCTURE AND METHOD FOR MAKING THE SAME

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Po-Chuan Tsai of Hsinchu (TW)

Wei-Ken Lin of Hsinchu (TW)

SEMICONDUCTOR STRUCTURE AND METHOD FOR MAKING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17383690 titled 'SEMICONDUCTOR STRUCTURE AND METHOD FOR MAKING THE SAME

Simplified Explanation

The abstract describes a semiconductor structure that includes a semiconductor feature, a protection layer, and a polymeric layer. The semiconductor feature consists of a passivation layer, an interconnecting structure, and a dielectric layer. The protection layer, made of oxide and nitride, is placed on top of the dielectric layer, and the polymeric layer is placed on top of the protection layer, separated from the interconnecting structure by the protection layer. The abstract also mentions a method of making this semiconductor structure.

  • The semiconductor structure includes a passivation layer, interconnecting structure, and dielectric layer.
  • A protection layer made of oxide and nitride is placed on top of the dielectric layer.
  • A polymeric layer is placed on top of the protection layer, separated from the interconnecting structure by the protection layer.
  • The method of making this semiconductor structure is also described.

Potential Applications

  • This semiconductor structure can be used in various electronic devices such as integrated circuits, microprocessors, and memory chips.
  • It can be applied in the manufacturing of sensors, transistors, and other semiconductor components.

Problems Solved

  • The protection layer made of oxide and nitride provides enhanced protection to the underlying semiconductor feature.
  • The polymeric layer acts as an additional protective barrier, further safeguarding the semiconductor structure.
  • The method of making this semiconductor structure ensures the proper layering and separation of the different components, improving the overall performance and reliability.

Benefits

  • The semiconductor structure offers improved protection against external factors such as moisture, dust, and contaminants.
  • The use of oxide and nitride in the protection layer enhances the durability and longevity of the semiconductor feature.
  • The polymeric layer adds an extra layer of protection without interfering with the functionality of the interconnecting structure.
  • The method of making this semiconductor structure provides a reliable and efficient manufacturing process.


Original Abstract Submitted

A semiconductor structure includes a semiconductor feature, a protection layer and a polymeric layer. The semiconductor feature includes a passivation layer, an interconnecting structure disposed on the passivation layer, and a dielectric layer disposed on the passivation layer and the interconnecting structure. The protection layer is disposed on the dielectric layer, and is oxide-and-nitride based. The polymeric layer is disposed on the protection layer, and is separated from the interconnecting structure by the protection layer. A method of making a semiconductor structure is also provided.

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