View source for 17381006. INTEGRATED CIRCUIT WITH NANOSHEET TRANSISTORS WITH METAL GATE PASSIVATION simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

=INTEGRATED CIRCUIT WITH NANOSHEET TRANSISTORS WITH METAL GATE PASSIVATION=


==Organization Name==

[[:Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.|TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]


[[Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]

==Inventor(s)==

[[:Category:Mao-Lin Huang of Hsinchu (TW)|Mao-Lin Huang of Hsinchu (TW)]][[Category:Mao-Lin Huang of Hsinchu (TW)]]

[[:Category:Lung-Kun Chu of Hsinchu (TW)|Lung-Kun Chu of Hsinchu (TW)]][[Category:Lung-Kun Chu of Hsinchu (TW)]]

[[:Category:Chung-Wei Hsu of Hsinchu (TW)|Chung-Wei Hsu of Hsinchu (TW)]][[Category:Chung-Wei Hsu of Hsinchu (TW)]]

[[:Category:Jia-Ni Yu of Hsinchu (TW)|Jia-Ni Yu of Hsinchu (TW)]][[Category:Jia-Ni Yu of Hsinchu (TW)]]

[[:Category:Kuo-Cheng Chiang of Hsinchu (TW)|Kuo-Cheng Chiang of Hsinchu (TW)]][[Category:Kuo-Cheng Chiang of Hsinchu (TW)]]

[[:Category:Kuan-Lun Cheng of Hsinchu (TW)|Kuan-Lun Cheng of Hsinchu (TW)]][[Category:Kuan-Lun Cheng of Hsinchu (TW)]]

[[:Category:Chih-Hao Wang of Hsinchu (TW)|Chih-Hao Wang of Hsinchu (TW)]][[Category:Chih-Hao Wang of Hsinchu (TW)]]

==INTEGRATED CIRCUIT WITH NANOSHEET TRANSISTORS WITH METAL GATE PASSIVATION - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17381006 titled 'INTEGRATED CIRCUIT WITH NANOSHEET TRANSISTORS WITH METAL GATE PASSIVATION

==Simplified Explanation==

The abstract describes a method for processing an integrated circuit that involves forming gate all around transistors of both N-type and P-type. The method includes depositing a metal gate layer for the P-type transistors and forming a passivation layer simultaneously with the metal gate layer.

* The method involves forming gate all around transistors, which provides improved control over the flow of electrical current.
* Both N-type and P-type transistors are included in the integrated circuit, allowing for a wider range of functionality.
* A metal gate layer is deposited specifically for the P-type transistors, enhancing their performance.
* The passivation layer is formed in-situ with the metal gate layer, simplifying the manufacturing process and reducing costs.

== Potential Applications ==
This technology can be applied in various fields where integrated circuits are used, including:

* Consumer electronics
* Telecommunications
* Automotive industry
* Medical devices
* Industrial automation

== Problems Solved ==
The method described in the patent application solves several problems associated with integrated circuit processing, such as:

* Lack of control over electrical current flow in traditional transistor designs
* Limited functionality due to the absence of both N-type and P-type transistors
* Performance limitations of P-type transistors without a metal gate layer
* Complex and costly manufacturing processes for forming passivation layers

== Benefits ==
The use of this technology offers several benefits:

* Improved control and efficiency of electrical current flow
* Enhanced functionality and versatility of integrated circuits
* Higher performance of P-type transistors with the addition of a metal gate layer
* Simplified manufacturing process and reduced costs due to in-situ formation of the passivation layer


==Original Abstract Submitted==

A method for processing an integrated circuit includes forming N-type and P-type gate all around transistors and core gate all around transistors. The method deposits a metal gate layer for the P-type transistors. The method forms a passivation layer in-situ with the metal gate layer of the P-type transistor.



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