17047912. ARRAY SUBSTRATE, PREPARATION METHOD THEREOF, AND DISPLAY PANEL simplified abstract (BOE TECHNOLOGY GROUP CO., LTD.)
Contents
ARRAY SUBSTRATE, PREPARATION METHOD THEREOF, AND DISPLAY PANEL
Organization Name
BOE TECHNOLOGY GROUP CO., LTD.
Inventor(s)
ARRAY SUBSTRATE, PREPARATION METHOD THEREOF, AND DISPLAY PANEL - A simplified explanation of the abstract
This abstract first appeared for US patent application 17047912 titled 'ARRAY SUBSTRATE, PREPARATION METHOD THEREOF, AND DISPLAY PANEL
Simplified Explanation
The patent application describes an array substrate and a method for preparing it, as well as a display panel. The method involves forming two thin film transistors on a base substrate. The first thin film transistor is formed by using a catalyst particle and silicon to create a silicon-based nanowire. The second thin film transistor is formed by growing an amorphous silicon film along a guide structure.
- The method uses the eutectic point of the catalyst particle and silicon to form a supersaturated silicon eutectoid, which then nucleates and grows into a silicon-based nanowire.
- The amorphous silicon film grows linearly along a guide structure under the action of the catalyst particle, resulting in a silicon-based nanowire with high density and uniformity.
- The size of the catalyst particle and the thickness of the amorphous silicon film can be controlled to determine the width of the silicon-based nanowire.
- This method allows for the preparation of a thin film transistor with a uniform and controllable size of the silicon-based nanowire.
Potential applications of this technology:
- Display panels in electronic devices such as smartphones, tablets, and televisions.
- Integrated circuits and microprocessors.
- Solar cells and photovoltaic devices.
Problems solved by this technology:
- Provides a method for preparing a thin film transistor with a silicon-based nanowire that has a uniform and controllable size.
- Offers a way to improve the density and uniformity of the silicon-based nanowires.
- Enables the production of high-performance display panels and integrated circuits.
Benefits of this technology:
- Enhanced performance and efficiency of display panels and electronic devices.
- Improved functionality and reliability of integrated circuits and microprocessors.
- Increased efficiency and cost-effectiveness of solar cells and photovoltaic devices.
Original Abstract Submitted
This disclosure provides an array substrate, a method for preparing the array substrate, and a display panel. The method includes: forming a first thin film transistor and a second thin film transistor on a base substrate. In the formation of an active layer of the first thin film transistor, by using an eutectic point of the catalyst particle and silicon, and a driving factor that the Gibbs free energy of amorphous silicon is greater than that of crystalline silicon (silicon-based nanowire), and due to absorption of the amorphous silicon by the molten catalyst particle to form a supersaturated silicon eutectoid, the silicon nucleates and grows into a silicon-based nanowire. Moreover, during the growth of the silicon-based nanowire, the amorphous silicon film grows linearly along guide structure under the action of the catalyst particle, thus obtaining a silicon-based nanowire with a high density and high uniformity. In addition, by controlling the size of the catalyst particle and the thickness of the amorphous silicon film, the width of the silicon-based nanowire may also be controlled. In this way, a thin film transistor having a silicon-based nanowire with a uniform and controllable size is prepared.
