View source for 16975115. QUANTUM DOTS LIGHT EMITTING DIODE, DISPLAY APPARATUS, AND METHOD OF FABRICATING QUANTUM DOTS LIGHT EMITTING DIODE simplified abstract (BOE TECHNOLOGY GROUP CO., LTD.)

=QUANTUM DOTS LIGHT EMITTING DIODE, DISPLAY APPARATUS, AND METHOD OF FABRICATING QUANTUM DOTS LIGHT EMITTING DIODE=


==Organization Name==

[[:Category:BOE TECHNOLOGY GROUP CO., LTD.|BOE TECHNOLOGY GROUP CO., LTD.]]


[[Category:BOE TECHNOLOGY GROUP CO., LTD.]]

==Inventor(s)==

[[:Category:Aidi Zhang of Beijing (CN)|Aidi Zhang of Beijing (CN)]][[Category:Aidi Zhang of Beijing (CN)]]

==QUANTUM DOTS LIGHT EMITTING DIODE, DISPLAY APPARATUS, AND METHOD OF FABRICATING QUANTUM DOTS LIGHT EMITTING DIODE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 16975115 titled 'QUANTUM DOTS LIGHT EMITTING DIODE, DISPLAY APPARATUS, AND METHOD OF FABRICATING QUANTUM DOTS LIGHT EMITTING DIODE

==Simplified Explanation==

The abstract describes a quantum dots light emitting diode (LED) that includes a unique electron transport layer with a gradient alloy composite sub-layer. This sub-layer consists of an electron transport oxide material and an electron transport non-oxide chalcogen-containing material, such as sulfide ion, selenium ion, or tellurium ion. The content of the chalcogen-containing material decreases from the quantum dots layer to the first electrode layer.

* The quantum dots LED includes a first electrode layer, an electron transport layer, and a quantum dots layer.
* The electron transport layer has a gradient alloy composite sub-layer.
* The sub-layer consists of an electron transport oxide material and an electron transport non-oxide chalcogen-containing material.
* The chalcogen-containing material can be sulfide ion, selenium ion, or tellurium ion.
* The content of the chalcogen-containing material decreases from the quantum dots layer to the first electrode layer.

==Potential Applications==
* Lighting: The quantum dots LED can be used for energy-efficient lighting applications.
* Displays: The technology can be applied in high-resolution displays for improved color accuracy.
* Optoelectronics: The LED can be utilized in various optoelectronic devices, such as sensors and photovoltaics.

==Problems Solved==
* Efficiency: The gradient alloy composite sub-layer improves the efficiency of the quantum dots LED.
* Color Accuracy: The technology enhances the color accuracy of displays by utilizing quantum dots.
* Performance: The unique electron transport layer design enhances the overall performance of the LED.

==Benefits==
* Energy Efficiency: The quantum dots LED provides energy-efficient lighting solutions.
* Improved Color Accuracy: The technology offers improved color accuracy in displays.
* Enhanced Performance: The unique electron transport layer design enhances the overall performance of the LED.


==Original Abstract Submitted==

A quantum dots light emitting diode is provided. The quantum dots light emitting diode includes a first electrode layer; an electron transport layer on the first electrode layer; and a quantum dots layer on a side of the electron transport layer away from the first electrode layer. The electron transport layer includes a gradient alloy composite sub-layer including an electron transport oxide material and an electron transport non-oxide chalcogen-containing material. The non-oxide chalcogen is selected from a group consisting of sulfide ion, selenium ion, and tellurium ion. The electron transport non-oxide chalcogen-containing material has a gradient distribution such that a content of the electron transport non-oxide chalcogen-containing material decreases along a direction from the quantum dots layer to the first electrode layer.



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