16975115. QUANTUM DOTS LIGHT EMITTING DIODE, DISPLAY APPARATUS, AND METHOD OF FABRICATING QUANTUM DOTS LIGHT EMITTING DIODE simplified abstract (BOE TECHNOLOGY GROUP CO., LTD.)
Contents
- 1 QUANTUM DOTS LIGHT EMITTING DIODE, DISPLAY APPARATUS, AND METHOD OF FABRICATING QUANTUM DOTS LIGHT EMITTING DIODE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 QUANTUM DOTS LIGHT EMITTING DIODE, DISPLAY APPARATUS, AND METHOD OF FABRICATING QUANTUM DOTS LIGHT EMITTING DIODE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Original Abstract Submitted
QUANTUM DOTS LIGHT EMITTING DIODE, DISPLAY APPARATUS, AND METHOD OF FABRICATING QUANTUM DOTS LIGHT EMITTING DIODE
Organization Name
BOE TECHNOLOGY GROUP CO., LTD.
Inventor(s)
QUANTUM DOTS LIGHT EMITTING DIODE, DISPLAY APPARATUS, AND METHOD OF FABRICATING QUANTUM DOTS LIGHT EMITTING DIODE - A simplified explanation of the abstract
This abstract first appeared for US patent application 16975115 titled 'QUANTUM DOTS LIGHT EMITTING DIODE, DISPLAY APPARATUS, AND METHOD OF FABRICATING QUANTUM DOTS LIGHT EMITTING DIODE
Simplified Explanation
The abstract describes a quantum dots light emitting diode (LED) that includes a unique electron transport layer with a gradient alloy composite sub-layer. This sub-layer consists of an electron transport oxide material and an electron transport non-oxide chalcogen-containing material, such as sulfide ion, selenium ion, or tellurium ion. The content of the chalcogen-containing material decreases from the quantum dots layer to the first electrode layer.
- The quantum dots LED includes a first electrode layer, an electron transport layer, and a quantum dots layer.
- The electron transport layer has a gradient alloy composite sub-layer.
- The sub-layer consists of an electron transport oxide material and an electron transport non-oxide chalcogen-containing material.
- The chalcogen-containing material can be sulfide ion, selenium ion, or tellurium ion.
- The content of the chalcogen-containing material decreases from the quantum dots layer to the first electrode layer.
Potential Applications
- Lighting: The quantum dots LED can be used for energy-efficient lighting applications.
- Displays: The technology can be applied in high-resolution displays for improved color accuracy.
- Optoelectronics: The LED can be utilized in various optoelectronic devices, such as sensors and photovoltaics.
Problems Solved
- Efficiency: The gradient alloy composite sub-layer improves the efficiency of the quantum dots LED.
- Color Accuracy: The technology enhances the color accuracy of displays by utilizing quantum dots.
- Performance: The unique electron transport layer design enhances the overall performance of the LED.
Benefits
- Energy Efficiency: The quantum dots LED provides energy-efficient lighting solutions.
- Improved Color Accuracy: The technology offers improved color accuracy in displays.
- Enhanced Performance: The unique electron transport layer design enhances the overall performance of the LED.
Original Abstract Submitted
A quantum dots light emitting diode is provided. The quantum dots light emitting diode includes a first electrode layer; an electron transport layer on the first electrode layer; and a quantum dots layer on a side of the electron transport layer away from the first electrode layer. The electron transport layer includes a gradient alloy composite sub-layer including an electron transport oxide material and an electron transport non-oxide chalcogen-containing material. The non-oxide chalcogen is selected from a group consisting of sulfide ion, selenium ion, and tellurium ion. The electron transport non-oxide chalcogen-containing material has a gradient distribution such that a content of the electron transport non-oxide chalcogen-containing material decreases along a direction from the quantum dots layer to the first electrode layer.
