18264202. NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, METHOD FOR PRODUCING SAME, AND NITRIDE SEMICONDUCTOR DEVICE simplified abstract (Panasonic Intellectual Property Management Co., Ltd.)
Contents
- 1 NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, METHOD FOR PRODUCING SAME, AND NITRIDE SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, METHOD FOR PRODUCING SAME, AND NITRIDE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.9.1 Unanswered Questions
- 1.9.2 How does the carbon concentration in the mixed crystal layer affect the properties of the nitride semiconductor epitaxial substrate?
- 1.9.3 What specific group III metal elements are typically used in the mixed crystal layer, and how do they contribute to the overall properties of the substrate?
- 1.10 Original Abstract Submitted
NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, METHOD FOR PRODUCING SAME, AND NITRIDE SEMICONDUCTOR DEVICE
Organization Name
Panasonic Intellectual Property Management Co., Ltd.
Inventor(s)
Hisayoshi Matsuo of Osaka (JP)
Manabu Yanagihara of Osaka (JP)
NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, METHOD FOR PRODUCING SAME, AND NITRIDE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18264202 titled 'NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, METHOD FOR PRODUCING SAME, AND NITRIDE SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a nitride semiconductor epitaxial substrate with a Si substrate, a nitride semiconductor epitaxial layer, and a mixed crystal layer containing Si, a group III metal element, and a high concentration of carbon (C).
- The substrate includes a Si substrate.
- A nitride semiconductor epitaxial layer is positioned above the Si substrate.
- A mixed crystal layer, containing Si, a group III metal element, and a high concentration of carbon (C), is located between the Si substrate and the nitride semiconductor epitaxial layer.
- The mixed crystal layer has a carbon concentration of at least 1.0×10^20 cm^-3 and a transition metal element concentration of at most 5.0×10^20 cm^-3.
Potential Applications
The technology could be applied in:
- High-power electronic devices
- Optoelectronic devices
- High-frequency devices
Problems Solved
- Enhanced performance of nitride semiconductor devices
- Improved thermal management
- Reduced defects in epitaxial layers
Benefits
- Increased efficiency of electronic devices
- Better heat dissipation
- Enhanced reliability of semiconductor components
Potential Commercial Applications
Optimizing Nitride Semiconductor Epitaxial Substrates for Improved Device Performance
Possible Prior Art
There may be prior art related to the use of mixed crystal layers in semiconductor devices to enhance performance and reliability.
Unanswered Questions
How does the carbon concentration in the mixed crystal layer affect the properties of the nitride semiconductor epitaxial substrate?
The patent application mentions a high concentration of carbon in the mixed crystal layer, but it does not elaborate on the specific effects of this carbon concentration on the substrate's performance and characteristics.
What specific group III metal elements are typically used in the mixed crystal layer, and how do they contribute to the overall properties of the substrate?
While the patent application mentions the presence of a group III metal element in the mixed crystal layer, it does not specify which specific elements are commonly used or how they interact with the other components of the substrate.
Original Abstract Submitted
A nitride semiconductor epitaxial substrate includes: a Si substrate; a nitride semiconductor epitaxial layer disposed above the Si substrate; and a mixed crystal layer disposed between the Si substrate and the nitride semiconductor epitaxial layer, and containing Si and a group III metal element, the mixed crystal layer containing a high concentration of C. The mixed crystal layer has a concentration of at least 1.0×10cm, and a transition metal element concentration of at most 5.0×10cm.