18100302. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Chun-Chieh Lu of Taipei City (TW)
Carlos H. Diaz of Mountain View CA (US)
Chih-Sheng Chang of Hsinchu (TW)
Cheng-Yi Peng of Taipei City (TW)
Ling-Yen Yeh of Hsinchu City (TW)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18100302 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The abstract describes a method of manufacturing a negative capacitance structure, which involves forming a dielectric layer over a substrate and then forming a first metallic layer over the dielectric layer. An annealing operation and a cooling operation are performed before forming a second metallic layer. As a result of the cooling operation, the dielectric layer transforms into a ferroelectric dielectric layer with an orthorhombic crystal phase, and the first metallic layer includes an oriented crystalline layer.
- A dielectric layer is formed over a substrate.
- A first metallic layer is formed over the dielectric layer.
- An annealing operation is performed.
- A cooling operation is performed.
- A second metallic layer is formed.
- The dielectric layer transforms into a ferroelectric dielectric layer with an orthorhombic crystal phase.
- The first metallic layer includes an oriented crystalline layer.
Potential Applications
- Electronics industry
- Energy storage devices
- Capacitors
- Memory devices
Problems Solved
- Enhancing the performance of electronic devices
- Improving energy storage capabilities
- Increasing the efficiency of capacitors and memory devices
Benefits
- Improved performance and efficiency of electronic devices
- Enhanced energy storage capabilities
- Increased capacitance in capacitors
- Improved memory retention and retrieval
Original Abstract Submitted
In a method of manufacturing a negative capacitance structure, a dielectric layer is formed over a substrate. A first metallic layer is formed over the dielectric layer. After the first metallic layer is formed, an annealing operation is performed, followed by a cooling operation. A second metallic layer is formed. After the cooling operation, the dielectric layer becomes a ferroelectric dielectric layer including an orthorhombic crystal phase. The first metallic film includes a oriented crystalline layer.