US Patent Application 18446549. SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF simplified abstract

SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Soon-Kang Huang of Hsin Chu (TW)]]

[[Category:Hsing-Chi Chen of Taichung City (TW)]]

SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18446549 titled 'SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF

Simplified Explanation

The patent application describes a semiconductor structure and a method for forming the structure.

• The method involves receiving a semiconductor substrate with two regions.
• A dielectric layer is formed over the substrate.
• Portions of the dielectric layer are removed to create a dielectric structure in the first region.
• The dielectric structure consists of a base structure and multiple first isolation structures.
• A semiconductor layer is then formed, covering both the first and second regions.
• A portion of the semiconductor layer is removed to expose the top surface of the first isolation structures.
• Finally, a plurality of second isolation structures are formed in the second region.

Original Abstract Submitted

A semiconductor structure and a method for forming a semiconductor structure are provided. The method includes receiving a semiconductor substrate having a first region and a second region; forming a dielectric layer over the semiconductor substrate; removing portions of the dielectric layer to form a dielectric structure in the first region, wherein the dielectric structure includes a base structure and a plurality of first isolation structures over the base structure; forming a semiconductor layer covering the first region and the second region; removing a portion of the semiconductor layer to expose a top surface of the plurality of first isolation structures; and forming a plurality of second isolation structures in the second region.