US Patent Application 18355799. Passivation Structure with Planar Top Surfaces simplified abstract

Passivation Structure with Planar Top Surfaces

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Yi-Hsiu Chen of Hsinchu (TW)

Wen-Chih Chiou of Zhunan Township (TW)

Chen-Hua Yu of Hsinchu (TW)

Passivation Structure with Planar Top Surfaces - A simplified explanation of the abstract

This abstract first appeared for US patent application 18355799 titled 'Passivation Structure with Planar Top Surfaces

Simplified Explanation

The patent application describes a method for forming layers on a surface to reveal a metal pad.

• The method involves creating a first passivation layer on the surface.
• A metal pad is then formed over the first passivation layer.
• A planarization layer is added on top of the metal pad to create a smooth surface.
• The planarization layer is patterned to create an opening, revealing the top surface of the metal pad.
• A polymer layer is formed within the opening, extending into it.
• The polymer layer is patterned to create a second opening, again revealing the top surface of the metal pad.

Original Abstract Submitted

A method includes forming a first passivation layer, forming a metal pad over the first passivation layer, forming a planarization layer having a planar top surface over the metal pad, and patterning the planarization layer to form a first opening. A top surface of the metal pad is revealed through the first opening. The method further includes forming a polymer layer extending into the first opening, and patterning the polymer layer to form a second opening. The top surface of the metal pad is revealed through the second opening.