US Patent Application 17738182. METHOD FOR FORMING SEMICONDUCTOR STRUCTURE simplified abstract

METHOD FOR FORMING SEMICONDUCTOR STRUCTURE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Chih-Hsin Yang of Zhubei City (TW)

Dian-Hau Chen of Hsinchu (TW)

Yen-Ming Chen of Hsin-Chu County (TW)

METHOD FOR FORMING SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17738182 titled 'METHOD FOR FORMING SEMICONDUCTOR STRUCTURE

Simplified Explanation

The patent application describes a method for forming a semiconductor structure.

• The method involves forming a contact feature over an insulating layer.
• A first passivation layer is then formed over the contact feature.
• The first passivation layer is etched to create a trench that exposes the contact feature.
• An oxide layer is formed over the contact feature, the first passivation layer, and in the trench.
• A first non-conductive structure is formed over the oxide layer.
• The first non-conductive structure is patterned to create a gap.
• A conductive material is filled into the gap to create a first conductive feature.
• The first non-conductive structure and the first conductive feature together form a first bonding structure.
• A carrier substrate is attached to the first bonding structure using a second bonding structure over the carrier substrate.

Original Abstract Submitted

A method for forming a semiconductor structure is provided. The method includes forming a contact feature over an insulating layer, forming a first passivation layer over the contact feature, and etching the first passivation layer to form a trench exposing the contact feature. The method also includes forming an oxide layer over the contact feature and the first passivation layer and in the trench, forming a first non-conductive structure over the oxide layer, and patterning the first non-conductive structure to form a gap. The method further includes filling a conductive material in the gap to form a first conductive feature. The first non-conductive structure and the first conductive feature form a first bonding structure. The method further includes attaching a carrier substrate to the first bonding structure via a second bonding structure over the carrier substrate.