US Patent Application 17735887. THERMAL SENSOR USING INVERSION DIFFUSIVITY RESISTANCE simplified abstract

THERMAL SENSOR USING INVERSION DIFFUSIVITY RESISTANCE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Jaw-Juinn Horng of Hsinchu (TW)

Szu-Lin Liu of Hsinchu City (TW)

Yung-Chow Peng of Hsinchu (TW)

Shenggao Li of Cupertino CA (US)

THERMAL SENSOR USING INVERSION DIFFUSIVITY RESISTANCE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17735887 titled 'THERMAL SENSOR USING INVERSION DIFFUSIVITY RESISTANCE

Simplified Explanation

The patent application describes a device that consists of multiple metal-oxide semiconductor field-effect transistors (MOSFETs) connected in series. Each MOSFET has a gate structure, a drain/source region on one side, and another drain/source region on the other side. The gate structure of each MOSFET is designed to receive a bias voltage, which turns on the MOSFETs and allows them to provide a temperature-dependent resistance. This resistance is then used to measure temperatures.

• The device includes multiple MOSFETs connected in series.
• Each MOSFET has a gate structure, drain/source regions, and is biased with a voltage.
• The MOSFETs provide a temperature-dependent resistance.
• The resistance is used for temperature measurement.

Original Abstract Submitted

A device including a first plurality of metal-oxide semiconductor field-effect transistors electrically connected in series. Each of the first plurality of metal-oxide semiconductor field-effect transistors includes a first gate structure, a first drain/source region on one side of the first gate structure, and a second drain/source region on another side of the first gate structure. The first gate structure of each of the first plurality of metal-oxide semiconductor field-effect transistors is configured to receive a bias voltage to bias on the first plurality of metal-oxide semiconductor field-effect transistors and provide a temperature dependent resistance through the first plurality of metal-oxide semiconductor field-effect transistors to measure temperatures.