International business machines corporation (20240105841). VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH HIGH PERFORMANCE OUTPUT simplified abstract
Contents
- 1 VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH HIGH PERFORMANCE OUTPUT
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH HIGH PERFORMANCE OUTPUT - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH HIGH PERFORMANCE OUTPUT
Organization Name
international business machines corporation
Inventor(s)
Brent A. Anderson of Jericho VT (US)
Albert M. Chu of Nashua NH (US)
Lawrence A. Clevenger of Saratoga Springs NY (US)
Ruilong Xie of Niskayuna NY (US)
Nicholas Anthony Lanzillo of Wynantskill NY (US)
REINALDO Vega of Mahopac NY (US)
VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH HIGH PERFORMANCE OUTPUT - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105841 titled 'VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH HIGH PERFORMANCE OUTPUT
Simplified Explanation
A vertical-transport field-effect transistor (VTFET) on a wafer has a first width, which is a contacted poly pitch (CPP). The bottom source/drain region of the VTFET extends at least the first width from the VTFET, and a contact from the front side of the VTFET is connected to the bottom source/drain region.
- Vertical-transport field-effect transistor (VTFET) on a wafer
- First width is a contacted poly pitch (CPP)
- Bottom source/drain region extends at least the first width from the VTFET
- Contact from the front side of the VTFET is connected to the bottom source/drain region
Potential Applications
The technology described in this patent application could be applied in the following areas:
- Semiconductor industry
- Electronics manufacturing
- Integrated circuit design
Problems Solved
The innovation addressed in this patent application helps solve the following issues:
- Enhancing transistor performance
- Improving contact reliability
- Increasing efficiency in vertical-transport field-effect transistors
Benefits
The technology offers the following benefits:
- Higher transistor efficiency
- Improved contact connectivity
- Enhanced overall performance of VTFETs
Potential Commercial Applications
With its various benefits and applications, this technology could be commercially utilized in:
- Semiconductor manufacturing companies
- Electronics research and development firms
- Integrated circuit design companies
Possible Prior Art
One possible prior art related to this technology is the development of vertical-transport field-effect transistors with different contact configurations and source/drain regions.
Unanswered Questions
How does this technology compare to existing transistor designs in terms of performance and efficiency?
The article does not provide a direct comparison between this technology and existing transistor designs in terms of performance and efficiency.
What are the specific manufacturing processes involved in creating the VTFET with the described features?
The article does not delve into the specific manufacturing processes involved in creating the VTFET with the described features.
Original Abstract Submitted
a vertical-transport field-effect transistor (vtfet) is on a wafer. the vtfet has a first width. the first width is a contacted poly pitch (cpp). a bottom source/drain region of the vtfet extends at least the first width from the vtfet. a contact from a frontside of the vtfet is connected to the bottom source/drain region.