18123749. EUV PHOTO MASKS AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
EUV PHOTO MASKS AND MANUFACTURING METHOD THEREOF
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Wen-Chang Hsueh of Longtan Township (TW)
Ta-Cheng Lien of Cyonglin Township (TW)
Hsin-Chang Lee of Zhubei City (TW)
EUV PHOTO MASKS AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18123749 titled 'EUV PHOTO MASKS AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The patent application describes a reflective mask with multiple layers for various applications.
- Substrate: The base layer of the mask.
- Reflective multilayer: Layer that reflects light.
- Capping layer: Protective layer on top of the reflective multilayer.
- First absorber layer: Absorbs certain wavelengths of light.
- First multilayer: Layer above the first absorber layer.
- Second absorber layer: Absorbs additional wavelengths of light.
- Second multilayer: Topmost layer of the mask.
- Potential Applications:**
- Lithography in semiconductor manufacturing
- Optical coatings for lenses and mirrors
- Solar energy applications
- Problems Solved:**
- Improves efficiency of light reflection and absorption
- Enhances precision in patterning processes
- Reduces light leakage and interference
- Benefits:**
- Increased accuracy in imaging processes
- Enhanced performance in optical devices
- Improved energy conversion in solar applications
Original Abstract Submitted
A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, a first absorber layer disposed on the capping layer, a first multilayer disposed over the first absorber layer, a second absorber layer disposed on the first multilayer layer, and a second multilayer, which is an uppermost layer of the reflective mask, disposed over the second absorber layer.
