18157352. Method and Structure for FinFET Isolation simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
Method and Structure for FinFET Isolation
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Che-Cheng Chang of New Taipei City (TW)
Method and Structure for FinFET Isolation - A simplified explanation of the abstract
This abstract first appeared for US patent application 18157352 titled 'Method and Structure for FinFET Isolation
Simplified Explanation
The abstract describes a semiconductor device that includes a substrate, a fin protruding from the substrate, and a gate stack over the substrate and engaging the fin. The device also includes a dielectric layer abutting the first end of the fin and spacer features on the sidewalls of the gate stack and on the top surface of the dielectric layer.
- The semiconductor device includes a fin protruding from the substrate, which allows for increased surface area and improved performance.
- The gate stack engages the fin, providing a connection between the fin and the substrate.
- A dielectric layer is placed against the first end of the fin, providing insulation and protection.
- Spacer features are present on the sidewalls of the gate stack and on the top surface of the dielectric layer, enhancing the performance and functionality of the device.
Potential Applications
- This semiconductor device can be used in various electronic devices, such as smartphones, tablets, and computers.
- It can be utilized in the manufacturing of integrated circuits and microprocessors.
Problems Solved
- The fin protruding from the substrate increases the surface area, allowing for improved performance and functionality.
- The gate stack engaging the fin provides a secure connection, ensuring proper operation of the device.
- The dielectric layer and spacer features protect and insulate the fin and other components, preventing damage and enhancing overall performance.
Benefits
- The increased surface area provided by the fin allows for better heat dissipation and improved electrical conductivity.
- The secure connection between the fin and the gate stack ensures reliable operation and reduces the risk of failure.
- The dielectric layer and spacer features enhance the durability and reliability of the device, extending its lifespan.
Original Abstract Submitted
A semiconductor device includes a substrate, a fin protruding from the substrate, and a gate stack over the substrate and engaging the fin. The fin having a first end and a second end. The semiconductor device also includes a dielectric layer abutting the first end of the fin and spacer features disposed on sidewalls of the gate stack and on a top surface of the dielectric layer.
