17988797. PAGE BUFFER CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

PAGE BUFFER CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

JIN-YOUNG Chun of SUWON-SI (KR)

MINJAE Seo of SUWON-SI (KR)

MOOSUNG Kim of SUWON-SI (KR)

PAGE BUFFER CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17988797 titled 'PAGE BUFFER CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME

Simplified Explanation

The abstract describes a non-volatile memory device that includes various components such as memory cells, inverters, transistors, and a control circuit. The device is designed to store and retrieve data efficiently.

• The memory device includes a memory cell and a bit line for data storage.
• A first cross-coupled inverter is used to store the data sensed from the memory cell.
• The first and second transistors are connected to the ends of the first cross-coupled inverter and transmit a ground voltage to those ends.
• A control circuit operates the transistors during the initialize and precharge periods to discharge the sensing node and precharge the bit line.

Potential applications of this technology:

• Non-volatile memory devices can be used in various electronic devices such as computers, smartphones, and tablets.
• The technology can be applied in data storage systems, allowing for efficient and reliable data storage.

Problems solved by this technology:

• The non-volatile memory device provides a reliable and efficient way to store and retrieve data.
• The control circuit ensures proper operation during the initialize and precharge periods, improving the overall performance of the memory device.

Benefits of this technology:

• The memory device offers non-volatile storage, meaning data is retained even when power is lost.
• The efficient operation of the memory device allows for faster data access and retrieval.
• The control circuit ensures proper initialization and precharging, enhancing the reliability and performance of the memory device.

Original Abstract Submitted

A non-volatile memory device includes: a memory cell; a bit line connected to the memory cell; a first cross coupled inverter for storing data sensed from the memory cell through a sensing node connected to the bit line; a first transistor and a second transistor respectively connected to respective ends of the first cross coupled inverter and respectively transmitting a ground voltage to respective ends of the first cross coupled inverter; and a control circuit for operating the first transistor and the second transistor at least once for at least one of an initialize period in which the sensing node is discharged and a precharge period in which the bit line is precharged.