18065799. NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
Organization Name
Inventor(s)
KOHJI Kanamori of Seongnam-si (KR)
HYO JOON Ryu of Hwaseong-si (KR)
JEE HOON Han of Hwaseong-si (KR)
NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18065799 titled 'NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
Simplified Explanation
The abstract describes a nonvolatile memory device that includes several components such as a conductive plate, a barrier conductive film, a mold structure with stacked gate electrodes, a channel hole, an impurity pattern, and a semiconductor pattern.
- The nonvolatile memory device consists of a conductive plate and a barrier conductive film.
- A mold structure is present, which includes multiple gate electrodes stacked on the barrier conductive film.
- The device has a channel hole that penetrates the mold structure, exposing the barrier conductive film.
- An impurity pattern is formed in the channel hole and is in contact with the barrier conductive film.
- A semiconductor pattern is formed in the channel hole, extending from the impurity pattern along the side surface of the channel hole.
- The semiconductor pattern intersects the multiple gate electrodes.
Potential Applications
- Nonvolatile memory devices are widely used in various electronic devices such as computers, smartphones, and tablets.
- This technology can be applied in the development of more efficient and high-performance nonvolatile memory devices.
Problems Solved
- Nonvolatile memory devices require a reliable and efficient design to store and retrieve data accurately.
- This technology provides a solution by incorporating a conductive plate, barrier conductive film, and stacked gate electrodes to enhance the performance and reliability of the memory device.
Benefits
- The use of a conductive plate and barrier conductive film improves the stability and durability of the nonvolatile memory device.
- The stacked gate electrodes allow for better control and manipulation of the stored data.
- The presence of the impurity pattern and semiconductor pattern enhances the functionality and performance of the memory device.
Original Abstract Submitted
Provided is a nonvolatile memory device. The nonvolatile memory device includes a conductive plate, a barrier conductive film extending along a surface of the conductive plate, a mold structure including a plurality of gate electrodes sequentially stacked on the barrier conductive film, a channel hole penetrating the mold structure to expose the barrier conductive film, an impurity pattern being in contact with the barrier conductive film, and formed in the channel hole, and a semiconductor pattern formed in the channel hole, extending from the impurity pattern along a side surface of the channel hole, and intersecting the plurality of gate electrodes.
