17463000. Method of Forming A Semiconductor Device simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Method of Forming A Semiconductor Device
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Chia-Cheng Chen of Hsinchu (TW)
Chun-Hung Wu of New Taipei City (TW)
Liang-Yin Chen of Hsinchu (TW)
Huicheng Chang of Tainan City (TW)
Chun-Yen Chang of Hsinchu (TW)
Chih-Kai Yang of Taipei City (TW)
Yu-Tien Shen of Tainan City (TW)
Method of Forming A Semiconductor Device - A simplified explanation of the abstract
This abstract first appeared for US patent application 17463000 titled 'Method of Forming A Semiconductor Device
Simplified Explanation
Abstract
The patent application describes a method for forming a semiconductor device. The method involves several steps, including the formation of a target layer over a semiconductor substrate, the formation of a carbon-rich hard masking layer over the target layer, the patterning of features in the carbon-rich hard masking layer using an etching process, the performance of a directional ion beam trimming process on the patterned features, and the patterning of the target layer using the carbon-rich hard masking layer as a mask.
Bullet Points
- Formation of a target layer over a semiconductor substrate
- Formation of a carbon-rich hard masking layer over the target layer
- Patterning of features in the carbon-rich hard masking layer using an etching process
- Performance of a directional ion beam trimming process on the patterned features
- Patterning of the target layer using the carbon-rich hard masking layer as a mask
Potential Applications
- Semiconductor manufacturing
- Integrated circuit fabrication
- Electronics industry
Problems Solved
- Provides a method for forming a semiconductor device with improved precision and accuracy
- Enables the patterning of features in a carbon-rich hard masking layer
- Allows for the use of a directional ion beam trimming process to further refine the patterned features
Benefits
- Enhanced control over the formation of semiconductor devices
- Improved efficiency and reliability in the fabrication process
- Enables the production of smaller and more advanced semiconductor devices
Original Abstract Submitted
A method for forming a semiconductor device is provided. In some embodiments, the method includes forming a target layer over a semiconductor substrate, forming a carbon-rich hard masking layer over the target layer, patterning features in the carbon-rich hard masking layer using an etching process, performing a directional ion beam trimming process on the features patterned in the carbon-rich hard masking layer, and patterning the target layer using the carbon-rich hard masking layer as a mask.
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Chia-Cheng Chen of Hsinchu (TW)
- Chun-Hung Wu of New Taipei City (TW)
- Liang-Yin Chen of Hsinchu (TW)
- Huicheng Chang of Tainan City (TW)
- Yee-Chia Yeo of Hsinchu (TW)
- Chun-Yen Chang of Hsinchu (TW)
- Chih-Kai Yang of Taipei City (TW)
- Yu-Tien Shen of Tainan City (TW)
- Ya Hui Chang of Hsinchu (TW)
- H01L21/027
- H01L21/311
- H01L21/768