17653390. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Organization Name
Inventor(s)
Tea Won Kim of Hwaseong-si (KR)
Hyung Joon Kim of Yongin-si (KR)
Yu Rim Kim of Hwaseong-si (KR)
Kong Soo Lee of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17653390 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Simplified Explanation
The patent application describes a semiconductor device that includes a conductive line, oxide semiconductor layers, a gate electrode, and a capacitor structure.
- The device has a conductive line on a substrate.
- There is a first oxide semiconductor layer on the conductive line, made of a crystalline oxide semiconductor material containing a metal element.
- A second oxide semiconductor layer is in physical contact with the first oxide semiconductor layer and connected to the conductive line.
- A gate electrode extends in a direction perpendicular to the conductive line, on the side of the second oxide semiconductor layer.
- A capacitor structure is connected to the second oxide semiconductor layer and the gate electrode.
- The second oxide semiconductor layer contains a crystalline oxide semiconductor material with the same metal element as the first oxide semiconductor layer, as well as two different metal elements.
Potential applications of this technology:
- Integrated circuits
- Transistors
- Memory devices
- Display panels
Problems solved by this technology:
- Improved performance and functionality of semiconductor devices
- Enhanced conductivity and stability of oxide semiconductor layers
- Efficient integration of different metal elements in the oxide semiconductor layers
Benefits of this technology:
- Higher efficiency and reliability of semiconductor devices
- Increased speed and performance of integrated circuits
- Improved memory storage and data processing capabilities
- Enhanced display quality and resolution
Original Abstract Submitted
A semiconductor device includes a conductive line that extends in a first direction on a substrate, a first oxide semiconductor layer, including a first crystalline oxide semiconductor material containing a first metal element, on the conductive line, a second oxide semiconductor layer, which is in physical contact with the first oxide semiconductor layer and is connected to the conductive line, on the conductive line, a gate electrode that extends in a second direction, which crosses the first direction, on a side of the second oxide semiconductor layer, and a capacitor structure connected to the second oxide semiconductor layer on the second oxide semiconductor layer and the gate electrode, wherein the second oxide semiconductor layer includes a second crystalline oxide semiconductor material containing the first metal element and second and third metal elements, which are different from the first metal element.
