17960277. SEMICONDUCTOR DEVICE WITH CHANNEL PATTERNS HAVING DIFFERENT WIDTHS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

SEMICONDUCTOR DEVICE WITH CHANNEL PATTERNS HAVING DIFFERENT WIDTHS

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Taehyung Kim of Hwaseong-si (KR)

Kwanyoung Chun of Suwon-si (KR)

Yoonjin Kim of Suwon-si (KR)

SEMICONDUCTOR DEVICE WITH CHANNEL PATTERNS HAVING DIFFERENT WIDTHS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17960277 titled 'SEMICONDUCTOR DEVICE WITH CHANNEL PATTERNS HAVING DIFFERENT WIDTHS

Simplified Explanation

The disclosed semiconductor device includes:

• An active region that protrudes upwardly from a substrate.
• A plurality of channel patterns that are spaced apart from each other in a first direction on the active region.
• A gate electrode that extends in the first direction on the active region and covers the plurality of channel patterns.
• Each of the plurality of channel patterns includes a plurality of semiconductor patterns that are spaced apart from each other in a direction perpendicular to the top surface of the active region.
• The gate electrode covers the top surface of the active region between the plurality of channel patterns.

Potential applications of this technology:

• This semiconductor device can be used in various electronic devices such as smartphones, tablets, and computers.
• It can be utilized in the manufacturing of integrated circuits and microprocessors.

Problems solved by this technology:

• The device addresses the need for improved performance and efficiency in semiconductor devices.
• It solves the problem of reducing the size and increasing the density of components in electronic devices.

Benefits of this technology:

• The active region protruding from the substrate allows for better control and performance of the semiconductor device.
• The spacing and arrangement of the channel patterns provide enhanced functionality and efficiency.
• The gate electrode covering the top surface between the channel patterns improves the overall performance and reliability of the device.

Original Abstract Submitted

Disclosed is a semiconductor device comprising an active region that protrudes upwardly from a substrate, a plurality of channel patterns that are spaced apart from each other in a first direction on the active region, and a gate electrode that extends in the first direction on the active region and covers the plurality of channel patterns. Each of the plurality of channel patterns includes a plurality of semiconductor patterns that are spaced apart from each other in a direction perpendicular to a top surface of the active region. The gate electrode covers the top surface of the active region between the plurality of channel patterns.