17838253. SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Yan-Ming Tsai of Miaoli County (TW)

Wei-Yip Loh of Hsinchu City (TW)

Harry Chien of Chandler AZ (US)

Chih-Shiun Chou of Hsinchu City (TW)

Hong-Mao Lee of Hsinchu City (TW)

Chih-Wei Chang of Hsin-Chu (TW)

Ming-Hsing Tsai of Hsinchu (TW)

SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17838253 titled 'SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME

Simplified Explanation

The patent application describes a method of forming a semiconductor device. Here are the key points:

• The method involves providing a substrate with a gate stack, an epitaxial layer, and a dielectric layer.
• An opening is formed through the dielectric layer to expose the epitaxial layer.
• A metal silicon-germanide layer is formed on the exposed epitaxial layer. The metal used in this layer has a high melting point of about 1700°C or higher.
• A connector is then formed over the metal silicon-germanide layer in the opening.

Potential applications of this technology:

• This method can be used in the manufacturing of various semiconductor devices, such as transistors, integrated circuits, and memory devices.
• It can be applied in industries that rely on semiconductor technology, including electronics, telecommunications, and computing.

Problems solved by this technology:

• The use of a metal silicon-germanide layer with a high melting point provides improved thermal stability and reliability to the semiconductor device.
• The method allows for the formation of a reliable and robust connection between the metal silicon-germanide layer and the connector.

Benefits of this technology:

• The high melting point metal silicon-germanide layer ensures the stability of the semiconductor device under high-temperature conditions.
• The reliable connection formed by the connector enhances the overall performance and longevity of the semiconductor device.
• This method offers a more efficient and cost-effective way of manufacturing semiconductor devices with improved thermal properties.

Original Abstract Submitted

A method of forming a semiconductor device includes following operations. A substrate is provided with a gate stack thereon, an epitaxial layer therein, and a dielectric layer aside the gate stack and over the epitaxial layer. An opening is formed through the dielectric layer, and the opening exposes the epitaxial layer. A metal silicon-germanide layer is formed on the epitaxial layer, wherein the metal silicon-germanide layer includes a metal having a melting point of about 1700° C. or higher. A connector is formed over the metal silicon-germanide layer in the opening.