US Patent Application 18361832. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Hsiang-Ku Shen of Hsinchu City (TW)

Liang-Wei Wang of Hsinchu City (TW)

Dian-Hau Chen of Hsinchu (TW)

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18361832 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FORMING THE SAME

Simplified Explanation

The patent application describes a semiconductor device that includes various components such as a substrate, metal line, dielectric layer, bottom electrode via, bottom electrode, magnetic tunneling junction stack, and top electrode.

• The device has a substrate with a metal line embedded in it.
• A dielectric layer is placed on top of the substrate.
• A bottom electrode via extends through the dielectric layer and connects to the metal line.
• A bottom electrode is placed on top of the bottom electrode via.
• A magnetic tunneling junction stack is placed on top of the bottom electrode.
• A top electrode is placed on top of the magnetic tunneling junction stack.
• The bottom electrode via is made up of two different metals - a first metal in the lower portion and a second metal in the upper portion.

Original Abstract Submitted

A semiconductor device includes a substrate with a metal line embedded in the substrate, a dielectric layer disposed on the substrate, a bottom electrode via extending through the dielectric layer and landing on a top surface of the metal line, a bottom electrode disposed on a top surface of the bottom electrode via, a magnetic tunneling junction stack disposed on a top surface of the bottom electrode, and a top electrode disposed on the magnetic tunneling junction stack. A lower portion of the bottom electrode via includes a first metal, and an upper portion of the bottom electrode via includes a second metal that is different from the first metal.