US Patent Application 18234147. MAGNETORESISTANCE EFFECT ELEMENT simplified abstract
Contents
MAGNETORESISTANCE EFFECT ELEMENT
Organization Name
Inventor(s)
MAGNETORESISTANCE EFFECT ELEMENT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18234147 titled 'MAGNETORESISTANCE EFFECT ELEMENT
Simplified Explanation
The patent application describes a magnetoresistance effect element consisting of two ferromagnetic metal layers and a tunnel barrier layer in between.
- The tunnel barrier layer is made up of a chemical compound expressed as ABO and has a disordered spinel structure.
- A represents either Mg or Zn, which are divalent cations.
- B represents a trivalent cation that can be Al, Ga, or In, among others.
- The innovation lies in the specific composition and structure of the tunnel barrier layer, which enhances the magnetoresistance effect in the element.
Original Abstract Submitted
A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer is expressed by a chemical formula of ABO, and has a spinel structure in which cations are arranged in a disordered manner, A represents a divalent cation that is either Mg or Zn, and B represents a trivalent cation that includes a plurality of elements selected from the group consisting of Al, Ga, and In.
