View source for US Patent Application 18447965. Polysilicon Removal In Word Line Contact Region Of Memory Devices simplified abstract

=Polysilicon Removal In Word Line Contact Region Of Memory Devices=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Company, Ltd.|Taiwan Semiconductor Manufacturing Company, Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Company, Ltd.]]

==Inventor(s)==

[[:Category:Yen-Jou Wu of Hsinchu (TW)|Yen-Jou Wu of Hsinchu (TW)]][[Category:Yen-Jou Wu of Hsinchu (TW)]]

[[:Category:Hsin-Hui Lin of Hsinchu (TW)|Hsin-Hui Lin of Hsinchu (TW)]][[Category:Hsin-Hui Lin of Hsinchu (TW)]]

[[:Category:Yu-Liang Wang of Hsinchu (TW)|Yu-Liang Wang of Hsinchu (TW)]][[Category:Yu-Liang Wang of Hsinchu (TW)]]

[[:Category:Chih-Ming Lee of Tainan City (TW)|Chih-Ming Lee of Tainan City (TW)]][[Category:Chih-Ming Lee of Tainan City (TW)]]

[[:Category:Keng-Ying Liao of Tainan City (TW)|Keng-Ying Liao of Tainan City (TW)]][[Category:Keng-Ying Liao of Tainan City (TW)]]

[[:Category:Ping-Pang Hsieh of Tainan City (TW)|Ping-Pang Hsieh of Tainan City (TW)]][[Category:Ping-Pang Hsieh of Tainan City (TW)]]

[[:Category:Su-Yu Yeh of Tainan City (TW)|Su-Yu Yeh of Tainan City (TW)]][[Category:Su-Yu Yeh of Tainan City (TW)]]

==Polysilicon Removal In Word Line Contact Region Of Memory Devices - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18447965 titled 'Polysilicon Removal In Word Line Contact Region Of Memory Devices

==Simplified Explanation==

The abstract describes a process for removing material between polysilicon lines in a memory cell strap region. 

* The process involves depositing a first hard mask layer in a divot on top of a polysilicon layer between two polysilicon gates.
* A second hard mask layer is then deposited on top of the first hard mask layer.
* A first etch is performed to remove the second hard mask layer and a portion of the first hard mask layer from the divot.
* A second etch is performed to remove the remaining second hard mask layer from the divot.
* Finally, a third etch is performed to remove the polysilicon layer not covered by the hard mask layers, creating a separation between the two polysilicon gates.


==Original Abstract Submitted==

The present disclosure describes a patterning process for a strap region in a memory cell for the removal of material between polysilicon lines. The patterning process includes depositing a first hard mask layer in a divot formed on a top portion of a polysilicon layer interposed between a first polysilicon gate structure and a second polysilicon gate; depositing a second hard mask layer on the first hard mask layer. The patterning process also includes performing a first etch to remove the second hard mask layer and a portion of the second hard mask layer from the divot; performing a second etch to remove the second hard mask layer from the divot; and performing a third etch to remove the polysilicon layer not covered by the first and second hard mask layers to form a separation between the first polysilicon gate structure and the second polysilicon structure.



[[Category:H10B41/35]]
[[Category:H01L29/788]]
[[Category:H01L29/423]]
[[Category:H01L29/66]]
[[Category:G11C8/14]]
[[Category:H10B41/10]]